Highly Efficient, Power-Scalable Long-Wavelength Diode Laser Pumps for Eye-Safe Solid-State Laser Development

Award Information
Agency:
Department of Defense
Branch
Army
Amount:
$729,191.00
Award Year:
2006
Program:
SBIR
Phase:
Phase II
Contract:
W911QX-06-C-0128
Agency Tracking Number:
A043-049-1781
Solicitation Year:
2004
Solicitation Topic Code:
A04-049
Solicitation Number:
2004.3
Small Business Information
PRINCETON LIGHTWAVE, INC.
2555 Route 130 South, Suite 1, Cranbury, NJ, 08512
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
170161595
Principal Investigator:
Dmitri Garbuzov
Chief Scientist
(609) 495-2546
dgarbuzov@princetonlightwave.com
Business Contact:
Mark Itzler
Chief Technical Officer
(609) 495-2551
mitzler@princetonlightwave.com
Research Institution:
n/a
Abstract
For Phase II of this program, Princeton Lightwave Inc. proposes to develop high power 1470 nm InGaAsP/InP diode laser arrays and stacks with dramatic improvements relative to the current state-of-the-art performance for threshold, differential efficiency, and wall-plug efficiency. These lasers will be based on a broadened waveguide structure employing an AlInAs blocking layer. Using these emitters, we will provide 1-cm arrays with power conversion efficiency of 45 - 50% and a maximum power of 130 W, as well as 10-array stacks with power exceeding 1 kW. In addition, we will apply spectral narrowing to these stacks using volume Bragg grating (VBG) technology to provide at least 500 W in a 1.5 nm spectral window. To achieve these goals, we will use our existing InP-based diode laser platform with which we have already demonstrated 54 W CW operation at 1530 nm from 1-cm arrays during Phase I of this program. These arrays had 30% conversion efficiency at maximum power, and we demonstrated 230 W output power for VBG-stabilized stacks. Arrays developed for Phase II of this program will provide unprecedented performance for eye-safe diode-pumped solid state lasers as well as for direct diode use. Moreover, the achievement of these Phase II goals will constitute a leap in 14xx nm pump laser performance that is proportionally comparable to the performance improvement for short-wavelength (GaAs) pump lasers achieved in DARPA’s SHEDS program.

* information listed above is at the time of submission.

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