Highly Efficient, Power-Scalable Long-Wavelength Diode Laser Pumps for Eye-Safe Solid-State Laser Development

Award Information
Agency: Department of Defense
Branch: Army
Contract: W911QX-06-C-0128
Agency Tracking Number: A043-049-1781
Amount: $729,191.00
Phase: Phase II
Program: SBIR
Awards Year: 2006
Solicitation Year: 2004
Solicitation Topic Code: A04-049
Solicitation Number: 2004.3
Small Business Information
PRINCETON LIGHTWAVE, INC.
2555 Route 130 South, Suite 1, Cranbury, NJ, 08512
DUNS: 170161595
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Dmitri Garbuzov
 Chief Scientist
 (609) 495-2546
 dgarbuzov@princetonlightwave.com
Business Contact
 Mark Itzler
Title: Chief Technical Officer
Phone: (609) 495-2551
Email: mitzler@princetonlightwave.com
Research Institution
N/A
Abstract
For Phase II of this program, Princeton Lightwave Inc. proposes to develop high power 1470 nm InGaAsP/InP diode laser arrays and stacks with dramatic improvements relative to the current state-of-the-art performance for threshold, differential efficiency, and wall-plug efficiency. These lasers will be based on a broadened waveguide structure employing an AlInAs blocking layer. Using these emitters, we will provide 1-cm arrays with power conversion efficiency of 45 - 50% and a maximum power of 130 W, as well as 10-array stacks with power exceeding 1 kW. In addition, we will apply spectral narrowing to these stacks using volume Bragg grating (VBG) technology to provide at least 500 W in a 1.5 nm spectral window. To achieve these goals, we will use our existing InP-based diode laser platform with which we have already demonstrated 54 W CW operation at 1530 nm from 1-cm arrays during Phase I of this program. These arrays had 30% conversion efficiency at maximum power, and we demonstrated 230 W output power for VBG-stabilized stacks. Arrays developed for Phase II of this program will provide unprecedented performance for eye-safe diode-pumped solid state lasers as well as for direct diode use. Moreover, the achievement of these Phase II goals will constitute a leap in 14xx nm pump laser performance that is proportionally comparable to the performance improvement for short-wavelength (GaAs) pump lasers achieved in DARPA’s SHEDS program.

* information listed above is at the time of submission.

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