High-Power, Frequency-Stabilized Diode Laser for Raman Spectroscopy

Award Information
Agency:
Department of Defense
Branch:
Missile Defense Agency
Amount:
$64,681.00
Award Year:
1998
Program:
SBIR
Phase:
Phase I
Contract:
N/A
Agency Tracking Number:
41128
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
PROCESS INSTRUMENTS, INC.
825 North 300 West, Suite 225, Salt Lake City, UT, 84103
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
N/A
Principal Investigator
 Lee M. Smith, Ph. D.
 (801) 322-1235
Business Contact
Phone: () -
Research Institution
N/A
Abstract
We propose to develop intermediate to high power (.1 to 4 W), frequency- stable diode lasers with high modulation capability and long life. Our approach can provide fixed-frequency radiation sources for 1 pace-based ballistic missile defense applications. To demonstrate the technology we will develop a compact, lightweight, relatively inexpensive, proprietary external-cavity-stabilized diode laser array with high power that can be used for Raman spectroscopy. Our approach offers a simple, reliable laser source with no moving parts for reduced maintenance and good stability and, most importantly, that is affordable for many military and industrial applications. Since our external-cavity technology can be used with any existing high power diode array, the technology offers a large wavelength selection. Research with lower power (

* information listed above is at the time of submission.

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