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High-Power, Frequency-Stabilized Diode Laser for Raman Spectroscopy

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: N/A
Agency Tracking Number: 41128
Amount: $64,681.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: N/A
Solicitation Number: N/A
Timeline
Solicitation Year: N/A
Award Year: 1998
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
825 North 300 West, Suite 225, Salt Lake City, UT, 84103
DUNS: N/A
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Lee M. Smith, Ph. D.
 (801) 322-1235
Business Contact
Phone: () -
Research Institution
N/A
Abstract
We propose to develop intermediate to high power (.1 to 4 W), frequency- stable diode lasers with high modulation capability and long life. Our approach can provide fixed-frequency radiation sources for 1 pace-based ballistic missile defense applications. To demonstrate the technology we will develop a compact, lightweight, relatively inexpensive, proprietary external-cavity-stabilized diode laser array with high power that can be used for Raman spectroscopy. Our approach offers a simple, reliable laser source with no moving parts for reduced maintenance and good stability and, most importantly, that is affordable for many military and industrial applications. Since our external-cavity technology can be used with any existing high power diode array, the technology offers a large wavelength selection. Research with lower power (

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