Indium Gallium Nitride (InGaN) Solar Cell

Award Information
Agency:
Department of Defense
Branch
Defense Advanced Research Projects Agency
Amount:
$734,232.00
Award Year:
2010
Program:
SBIR
Phase:
Phase II
Contract:
W91CRB-10-C-0130
Award Id:
91925
Agency Tracking Number:
08SB2-0794
Solicitation Year:
n/a
Solicitation Topic Code:
DARPA 08-052
Solicitation Number:
n/a
Small Business Information
1019 Collier Road, Suite C1, Atlanta, GA, 30318
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
826426025
Principal Investigator:
JeffNause
President
(404) 351-0005
jnause@cermetinc.com
Business Contact:
KarenShaw
Program Administrator
(404) 351-0005
kshaw@cermetinc.com
Research Institute:
n/a
Abstract
Cermet, in collaboration with leading university partners, proposes to use state of the art indium gallium nitride growth technology to produce InGaN junctions for solar cell production. Using multi-junction InGaN geometries, highly efficient solar cells will be demonstrated.

* information listed above is at the time of submission.

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