Indium Gallium Nitride (InGaN) Solar Cell

Award Information
Agency: Department of Defense
Branch: Defense Advanced Research Projects Agency
Contract: W91CRB-10-C-0130
Agency Tracking Number: 08SB2-0794
Amount: $734,098.00
Phase: Phase II
Program: SBIR
Awards Year: 2010
Solicitation Year: 2008
Solicitation Topic Code: SB082-052
Solicitation Number: 2008.2
Small Business Information
Cermet, Inc.
1019 Collier Road, Suite C1, Atlanta, GA, 30318
DUNS: 826426025
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Jeff Nause
 (404) 351-0005
Business Contact
 Karen Shaw
Title: Program Administrator
Phone: (404) 351-0005
Research Institution
Cermet, in collaboration with leading university partners, proposes to use state of the art indium gallium nitride growth technology to produce InGaN junctions for solar cell production. Using multi-junction InGaN geometries, highly efficient solar cells will be demonstrated.

* information listed above is at the time of submission.

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