Indium Gallium Nitride (InGaN) Solar Cell

Award Information
Agency: Department of Defense
Branch: Defense Advanced Research Projects Agency
Contract: W91CRB-10-C-0130
Agency Tracking Number: 08SB2-0794
Amount: $734,098.00
Phase: Phase II
Program: SBIR
Awards Year: 2010
Solicitation Year: 2008
Solicitation Topic Code: SB082-052
Solicitation Number: 2008.2
Small Business Information
Cermet, Inc.
1019 Collier Road, Suite C1, Atlanta, GA, 30318
DUNS: 826426025
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Jeff Nause
 President
 (404) 351-0005
 jnause@cermetinc.com
Business Contact
 Karen Shaw
Title: Program Administrator
Phone: (404) 351-0005
Email: kshaw@cermetinc.com
Research Institution
N/A
Abstract
Cermet, in collaboration with leading university partners, proposes to use state of the art indium gallium nitride growth technology to produce InGaN junctions for solar cell production. Using multi-junction InGaN geometries, highly efficient solar cells will be demonstrated.

* information listed above is at the time of submission.

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