A Novel High-Sensitivity High-Temperature Transistor Infrared Sensor

Award Information
Agency:
Department of Defense
Amount:
$150,000.00
Program:
SBIR
Contract:
HQ0006-05-C-7147
Solitcitation Year:
2004
Solicitation Number:
2004.4
Branch:
Missile Defense Agency
Award Year:
2005
Phase:
Phase I
Agency Tracking Number:
044-1154
Solicitation Topic Code:
MDA04-173
Small Business Information
QMAGIQ, LLC
One Tara Boulevard, Suite 102, Nashua, NH, 03062
Hubzone Owned:
N
Woman Owned:
N
Socially and Economically Disadvantaged:
N
Duns:
168454770
Principal Investigator
 Mani Sundaram
 CEO/President
 (603) 821-3092
 msundaram@qmagiq.com
Business Contact
 Axel Reisinger
Title: CTO
Phone: (603) 821-3093
Email: areisinger@qmagiq.com
Research Institution
N/A
Abstract
We propose a novel infrared focal plane array (IRFPA) based on quantum dots in the channel of a gated high-electron-mobility-transistor (HEMT). This 3-terminal device, that we call a QHEMT, will exploit a lateral (source to drain) photocurrent generated by intersubband absorption of infrared photons in InGaAs quantum dots in the channel. The gate will be used to minimize dark current and maximize signal to noise ratio. Peak EXTERNAL quantum efficiencies greater than 50% and high operating temperature (appproaching room temperature) are expected because of the 3-dimensional quantization of energy states in the dots. A 320x256 array of QHEMT pixels will be designed and fabricated in such a way as to allow hybridization to an off-the-shelf Read Out Integrated Circuit (ROIC). In Phase 1, we will design, grow, and fabricate a QHEMT array, hybridize it to a FANOUT, and perform complete radiometric, optical, and electrical testing to assess the viability of this device concept.

* information listed above is at the time of submission.

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