Passive IR Sensors Based on High Quantum Efficiency P-on-N Type-II Strained Layer Superlattices

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: HQ0006-07-C-7759
Agency Tracking Number: B063-013-0728
Amount: $100,000.00
Phase: Phase I
Program: SBIR
Awards Year: 2007
Solicitation Year: 2006
Solicitation Topic Code: MDA06-013
Solicitation Number: 2006.3
Small Business Information
One Tara Boulevard, Suite 102, Nashua, NH, 03062
DUNS: 168454770
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Mani Sundaram
 CEO & President
 (603) 821-3092
Business Contact
 Axel Reisinger
Title: CTO
Phone: (603) 821-3092
Research Institution
We propose to develop sensitive passive infrared sensors for ballistic missile defense applications from Type-II InAs/GaSb strained layer superlattices (SLS). The novelty of our approach lies in using a P-on-N photodiode device geometry (in contrast to the usual N-on-P) to leverage the excellent low-noise readout multiplexers available to drive these diode arrays. In Phase 1, we will quantify and optimize our material and passivation quality, and develop and DELIVER a 320x256 longwave infrared focal plane array (LWIR FPA). In Phase 2, we will further drive the technology and develop and DELIVER 1Kx1K dualband FPAs with pixel-registered and simultaneous imaging in two longwave infrared bands. This FPA will enhance target discrimination and provide a larger field of view to infrared seekers such as THAAD.

* Information listed above is at the time of submission. *

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