Sensitive Longwave Infrared Sensors Based on P-on-N Type-II Strained Layer Superlattices

Award Information
Agency: Department of Defense
Branch: Air Force
Contract: FA9453-07-M-0119
Agency Tracking Number: F071-292-2007
Amount: $100,000.00
Phase: Phase I
Program: SBIR
Awards Year: 2007
Solitcitation Year: 2007
Solitcitation Topic Code: AF071-292
Solitcitation Number: 2007.1
Small Business Information
One Tara Boulevard, Suite 102, Nashua, NH, 03062
Duns: 168454770
Hubzone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Mani Sundaram
 (603) 821-3092
Business Contact
 Axel Reisinger
Title: CTO
Phone: (603) 821-3092
Research Institution
We propose to develop high-sensitivity longwave (cutoff ~ 10-12 microns) infrared sensors for space situational awareness applications from Type-II InAs/GaSb strained layer superlattices (SLS). One novelty of our approach lies in using a P-on-N photodiode design (in contrast to the usual N-on-P) to leverage the excellent low-noise readout multiplexers available to drive P-on-N diode arrays. In Phase 1, we will develop material and passivation and measure their quality via test diode arrays that we will fabricate and test. Quality permitting, a companion 320x256 array will be hybridized to a readout, post-processed into a focal plane array (FPA), and tested for imaging performance. In Phase 2, we will further develop growth and processing with the aim of achieving FPAs with high quantum efficiency, low noise, and high pixel uniformity and operability. Several FPAs will be delivered.

* information listed above is at the time of submission.

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