Affordable Large-Format Mid-Infrared (IR) Imagers Using Large Metamorphic InSb-on-GaAs Wafers

Award Information
Agency: Department of Defense
Branch: Air Force
Contract: FA8718-06-C-0052
Agency Tracking Number: F061-212-3467
Amount: $100,000.00
Phase: Phase I
Program: SBIR
Awards Year: 2006
Solicitation Year: 2006
Solicitation Topic Code: AF06-212
Solicitation Number: 2006.1
Small Business Information
One Tara Boulevard, Suite 102, Nashua, NH, 03062
DUNS: 168454770
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Mani Sundaram
 CEO & President
 (603) 821-3092
Business Contact
 Axel Reisinger
Title: CTO
Phone: (603) 821-3092
Research Institution
We propose epitaxial InSb grown on large metamorphic GaAs substrates as a platform to enable large affordable mid-infrared focal plane arrays (FPAs). In Phase 1, we will design and grow a number of metamorphic buffers to accommodate the lattice mismatch between InSb and GaAs. Their quality will be evaluated in actual focal plane arrays that we will fabricate and test. Phase 1 will experimentally test the feasibility of this approach. If successful, Phase 2 will quantify manufacturability and yield issues of InSb FPAs on 6-inch GaAs substrates.

* information listed above is at the time of submission.

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