ELECTRON TRAPPING OPTICAL READ/WRITE/ERASE MEMORY

Award Information
Agency: Department of Defense
Branch: Air Force
Contract: N/A
Agency Tracking Number: 4298
Amount: $200,000.00
Phase: Phase II
Program: SBIR
Awards Year: 1987
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
2 Research Ct, Rockville, MD, 20850
DUNS: N/A
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Charles Y Wrigley
 (301) 258-2701
Business Contact
Phone: () -
Research Institution
N/A
Abstract
RECENTLY HIGH EFFICIENCY PHOSPHORS HAVE BEEN DEVELOPED AT QUANTEX. THESE MATERIALS CONTAIN EXTREMELY REPRODUCIBLE TRAPS, THEREFORE THEY ARE CALLED ET MATERIALS. THE ELECTRON TRAPPING FROM VISIBLE LIGHT PRODUCES EXTREMELY LONG TERM STORAGE, WHICH CAN BE INSTANTLY INTERROGATED BY INFRARED TO PRODUCE A VISIBLE OUTPUT. CONSEQUENTLY, A TOTALLY PHOTONIC READ/WRITE/ERASE MEMORY CAN BE CONSTRUCTED. IT IS PROPOSED TO FABRICATE EXPERIMENTAL FILM STRUCTURES WITH THESE ET MATERIALS AND EVALUATE PHOTONIC MEMORY PROPERTIES, IN TERMS OF INFORMATION DENSITY, THROUGHPUT RATES, SIGNAL-TO-NOISE RATIO, ETC.

* Information listed above is at the time of submission. *

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