ELECTRON TRAPPING OPTICAL READ/WRITE/ERASE MEMORY

Award Information
Agency:
Department of Defense
Branch
Air Force
Amount:
$200,000.00
Award Year:
1987
Program:
SBIR
Phase:
Phase II
Contract:
n/a
Award Id:
4298
Agency Tracking Number:
4298
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
2 Research Ct, Rockville, MD, 20850
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Charles Y Wrigley
(301) 258-2701
Business Contact:
() -
Research Institute:
n/a
Abstract
RECENTLY HIGH EFFICIENCY PHOSPHORS HAVE BEEN DEVELOPED AT QUANTEX. THESE MATERIALS CONTAIN EXTREMELY REPRODUCIBLE TRAPS, THEREFORE THEY ARE CALLED ET MATERIALS. THE ELECTRON TRAPPING FROM VISIBLE LIGHT PRODUCES EXTREMELY LONG TERM STORAGE, WHICH CAN BE INSTANTLY INTERROGATED BY INFRARED TO PRODUCE A VISIBLE OUTPUT. CONSEQUENTLY, A TOTALLY PHOTONIC READ/WRITE/ERASE MEMORY CAN BE CONSTRUCTED. IT IS PROPOSED TO FABRICATE EXPERIMENTAL FILM STRUCTURES WITH THESE ET MATERIALS AND EVALUATE PHOTONIC MEMORY PROPERTIES, IN TERMS OF INFORMATION DENSITY, THROUGHPUT RATES, SIGNAL-TO-NOISE RATIO, ETC.

* information listed above is at the time of submission.

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