Quantum Epitaxial Designs,

Company Information

Company Name
Quantum Epitaxial Designs,
Address
119 Technology Drive
Bethlehem, PA, 18015
Phone
n/a
URL
n/a
DUNS
n/a
Number of Employees
50

Award Totals

PROGRAM/PHASE
AWARD AMOUNT ($)
NUMBER OF AWARDS
SBIR Phase I
$812,827.00
12
SBIR Phase II
$1,707,800.00
3
Chart code to be here

Award List

  1. ULTRASTRUCTURED MATERIALS

    Amount: $55,926.00

    THE MOST PROMISING CANDIDATE FOR THE NEXT GENERATION, HIGH SPEED ELECTRONIC DEVICES IS THE PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTOR (PHEMT). DEVICES BASED ON PHEMT TECHNOLOGY HAVE DEMONSTRATED ...

    SBIR Phase I 1989 Air ForceDepartment of Defense
  2. PLANAR DOPED PSEUDOMORPHIC HIGH ELECTRONIC MOBILITY TRANSISTOR DEVELOPMENT

    Amount: $55,107.00

    THE MOST PROMISING MATERIAL SYSTEM TO MEET THE PERFORMANCE CRITERIA FOR LOW NOISE AND POWER DEVICES OPERATING AT MILLIMETERWAVE FREQUENCIES IS THE PLANAR DOPED PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRA ...

    SBIR Phase I 1991 Missile Defense AgencyDepartment of Defense
  3. OPTIMIZATION OF INGAAS/INALAS/INP EOIC STRUCTURES: AN MBE MATERIAL PARAMETER STUDY

    Amount: $509,000.00

    PHASE I OF THIS PROGRAM WILL OPTIMIZE THE GROWTH OF LATTICE MATCHED INGAAS/INALAS ON INP FOR EOIC APPLICATIONS THROUGH THE USE ON INNOVATIVE MOLECULAR BEAM EPITAXIAL (MBE) GROWTH AND CALIBRATION PROCE ...

    SBIR Phase II 1993 Air ForceDepartment of Defense
  4. Carbon Doped HBT Development for Power Applications

    Amount: $744,918.00

    Heterojunction bipolar transistor, HBT, technology offers an extremely attractive alternative to field effect transistors, FETs, for a variety of high speed applications. High p-type base doping level ...

    SBIR Phase II 1995 Air ForceDepartment of Defense
  5. Cool Heterojunction Metal Semiconductor Metal Photodetect

    Amount: $59,640.00

    Metal Semiconductor Metal (MSM) photodetectors are used in a wide range of commercial and military applications such as phased array radars, photonic gates for MIMIC circuits, analog circuits for imag ...

    SBIR Phase I 1995 Missile Defense AgencyDepartment of Defense
  6. Quantum-Well, Infrared Photodetectors Using III-V Materialsp

    Amount: $453,882.00

    Quantum Well Infrared Photodetectors (QWIPs) based on the III-V material system make an excellent detector choice for certain infrared applications. Although the QWIP does not compare favorably with t ...

    SBIR Phase II 1995 National Aeronautics and Space Administration
  7. Intersubband Quantum Cascade Infrared Laser Development

    Amount: $70,000.00

    Quantum well intersubband transition devices have generated a large amount of interest over the past several years. With the demonstration of the first intersubband laser this past year at AT&T Bell L ...

    SBIR Phase I 1995 Missile Defense AgencyDepartment of Defense
  8. Integrated QWIP Focal Plane Array Technology

    Amount: $62,101.00

    Current focal plane array technology remains more expensive than the budgeted acquisition costs for many DOD systems. Even though DOD has spent millions of dollars to improve HgCdTe manufacturing tech ...

    SBIR Phase I 1996 Missile Defense AgencyDepartment of Defense
  9. Dual Band Normal Incidence Quantum Well Intersubband Photodetector

    Amount: $62,240.00

    GaAs-based Quantum Well Intersubband Photodetectors (QWIP's) are very attractive devices for large staring Focal Plane Arrays) FPA's) at mid and long infrared wavelengths. The mature GaAs processing t ...

    SBIR Phase I 1996 Missile Defense AgencyDepartment of Defense
  10. InP Channel HEMT Development for MM-Wave Power Applications

    Amount: $90,846.00

    Millimeter-wave system designers are limited to two terminal devices when high powers are required from a solid state device. InGaAs/InAlAs HEMTs latticed matched to InP substrates have produced excel ...

    SBIR Phase I 1994 Defense Advanced Research Projects AgencyDepartment of Defense

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