Quantum Epitaxial Designs,

Address

119 Technology Drive
Bethlehem, PA, 18015

Information

DUNS:
# of Employees: 50

Ownership Information

Hubzone Owned: N
Socially and Economically Disadvantaged: N
Woman Owned: N

Award Charts




Award Listing

  1. Enhanced Reliability of Radiation-hardened III-V Semiconductor-based Field Effect Transistors Using C-doped Low-temperature Buffer

    Amount: $97,153.00

    Low-temperature MBE grown GaAs (LT-GaAs) contains a high concentration of excess As which gives rise to ultra-fast carrier-trapping time and excellent radiation hardness. In as-grown layers most of t ...

    SBIRPhase I1998National Geospatial-Intelligence Agency Department of Defense
  2. Improved Wavelength-Insensitive Optical Coupling for Quantum Well Intersubband Photodetectors

    Amount: $83,692.00

    GaAs based Quantum Well Intersubband Photodetectors (QWIP) are attractive devices for large staring Focal Plane Arrays (FPA) at mid- and long- infrared wavelengths. The mature GaAs processing technol ...

    SBIRPhase I1997Air Force Department of Defense
  3. Integrated QWIP Focal Plane Array Technology

    Amount: $62,101.00

    Current focal plane array technology remains more expensive than the budgeted acquisition costs for many DOD systems. Even though DOD has spent millions of dollars to improve HgCdTe manufacturing tech ...

    SBIRPhase I1996Missile Defense Agency Department of Defense
  4. Dual Band Normal Incidence Quantum Well Intersubband Photodetector

    Amount: $62,240.00

    GaAs-based Quantum Well Intersubband Photodetectors (QWIP's) are very attractive devices for large staring Focal Plane Arrays) FPA's) at mid and long infrared wavelengths. The mature GaAs processing t ...

    SBIRPhase I1996Missile Defense Agency Department of Defense
  5. Carbon Doped HBT Development for Power Applications

    Amount: $744,918.00

    Heterojunction bipolar transistor, HBT, technology offers an extremely attractive alternative to field effect transistors, FETs, for a variety of high speed applications. High p-type base doping level ...

    SBIRPhase II1995Air Force Department of Defense
  6. Cool Heterojunction Metal Semiconductor Metal Photodetect

    Amount: $59,640.00

    Metal Semiconductor Metal (MSM) photodetectors are used in a wide range of commercial and military applications such as phased array radars, photonic gates for MIMIC circuits, analog circuits for imag ...

    SBIRPhase I1995Missile Defense Agency Department of Defense
  7. Quantum-Well, Infrared Photodetectors Using III-V Materialsp

    Amount: $453,882.00

    Quantum Well Infrared Photodetectors (QWIPs) based on the III-V material system make an excellent detector choice for certain infrared applications. Although the QWIP does not compare favorably with t ...

    SBIRPhase II1995National Aeronautics and Space Administration
  8. Intersubband Quantum Cascade Infrared Laser Development

    Amount: $70,000.00

    Quantum well intersubband transition devices have generated a large amount of interest over the past several years. With the demonstration of the first intersubband laser this past year at AT&T Bell L ...

    SBIRPhase I1995Missile Defense Agency Department of Defense
  9. InP Channel HEMT Development for MM-Wave Power Applications

    Amount: $90,846.00

    Millimeter-wave system designers are limited to two terminal devices when high powers are required from a solid state device. InGaAs/InAlAs HEMTs latticed matched to InP substrates have produced excel ...

    SBIRPhase I1994Defense Advanced Research Projects Agency Department of Defense
  10. Quantum-Well, Infrared Photodetectors Using III-V Materialsp

    Amount: $66,196.00

    N/A

    SBIRPhase I1994National Aeronautics and Space Administration

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