ULTRASTRUCTURED MATERIALS

Award Information
Agency:
Department of Defense
Branch
Air Force
Amount:
$55,926.00
Award Year:
1989
Program:
SBIR
Phase:
Phase I
Contract:
n/a
Award Id:
10094
Agency Tracking Number:
10094
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
S Mountain Dr - Ben Franklin T, Bethlehem, PA, 18015
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Thomas Hierl
(215) 758-5262
Business Contact:
() -
Research Institution:
n/a
Abstract
THE MOST PROMISING CANDIDATE FOR THE NEXT GENERATION, HIGH SPEED ELECTRONIC DEVICES IS THE PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTOR (PHEMT). DEVICES BASED ON PHEMT TECHNOLOGY HAVE DEMONSTRATED EXTREMELY HIGH CUT-OFF FREQUENCIES. FULL UTILIZATION OF THE MODULATION DOPING PHENOMENA CAN BE ACHIEVED BY INCREASING THE CONDUCTION BAND DISCONTINUITY BETWEEN THE INGAAS CHANNEL AND ALGAAS DONOR LAYER BY INCREASING THE INDIUM MOLE FRACTION TO 40%. IN ORDER TO PREVENT LATTICE STRAIN RELAXATION DUE TO THE LARGE LATTICE MISMATCH BETWEEN MATERIALS, CONVENTIONAL MBE MUST BE SUPPLEMENTED WITH THE ADVANCED GROWTH TECHNIQUES OF MIGRATION ENHANCED EPITAXY (MEE) AND PHASED LOCKED EPITAXY (PLE). PHASE I WILL DEVELOP THE MEE AND PLE TECHNIQUES REQUIRED TO GROW PHEMTS HAVING INGAAS CHANNELS WITH INDIUM MOLE FRACTIONS OF 40%. PHASE II WORK WILL EXTEND AND REFINE THE TECHNIQUES FOR THE MANUFACTURE OF A WIDER RANGE OF STRATEGIC ELECTRONIC MATERIALS.

* information listed above is at the time of submission.

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