Prognostic Capabilities for Field Effect Transistors (FET)

Award Information
Agency:
Department of Defense
Amount:
$1,001,800.00
Program:
SBIR
Contract:
N68335-07-C-0210
Solitcitation Year:
2006
Solicitation Number:
2006.1
Branch:
Navy
Award Year:
2007
Phase:
Phase II
Agency Tracking Number:
N061-007-0283
Solicitation Topic Code:
N06-007
Small Business Information
RIDGETOP GROUP, INC.
6595 North Oracle Road, Suite 153B, Tucson, AZ, 85704
Hubzone Owned:
N
Woman Owned:
Y
Socially and Economically Disadvantaged:
N
Duns:
157955597
Principal Investigator
 Ronald Carlsten
 Principal Investigator
 (520) 742-3300
 ronald.carlsten@ridgetop-group.com
Business Contact
 Douglas Goodman
Title: President and CEO
Phone: (520) 742-3300
Email: doug@ridgetop-group.com
Research Institution
N/A
Abstract
Shrinking semiconductor process geometries (130 nm and below) are increasingly subject to performance, lifetime, and reliability-limiting effects that can cause hard-to-diagnose intermittent failures. One of the most serious emerging reliability problems is called Negative Bias Temperature Instability (NBTI). NBTI is a p-MOSFET degradation mechanism that causes increasing threshold voltage (VT) shifts. Such shifts, if large enough, cause intermittent performance problems in electronic modules, including timing errors and gain accuracy errors. Working with IBM’s Trusted Foundry semiconductor process, Ridgetop will design, develop, and fabricate an NBTI prognostic circuit that measures the VT shift in a p-MOSFET and reports its state-of-health. The p-FET Prognostic Chip will be fabricated in the IBM 130 nm process, with Options for the IBM 90 nm and 65 nm processes. Ridgetop will also provide generic serial data output capability, and as an Option, an I2C-bus interface for use in important military applications, such as the Joint Strike Fighter.

* information listed above is at the time of submission.

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