Deep Submicron Radiation Hardened Logic for Communications

Award Information
Agency: Department of Defense
Branch: Air Force
Contract: FA9453-09-M-0115
Agency Tracking Number: F083-204-1213
Amount: $99,984.00
Phase: Phase I
Program: SBIR
Awards Year: 2009
Solicitation Year: 2008
Solicitation Topic Code: AF083-204
Solicitation Number: 2008.3
Small Business Information
6595 North Oracle Road, Tucson, AZ, 85704
DUNS: 157955597
HUBZone Owned: N
Woman Owned: Y
Socially and Economically Disadvantaged: N
Principal Investigator
 James Hofmeister
 (520) 742-3300
Business Contact
 Douglas Goodman
Title: Chief Scientist
Phone: (520) 742-3300
Research Institution
Ridgetop Group, Inc. is proposing a Phase I Feasibility and Merit study as follows: 1. Conduct a Feasibility study on whether Heterojunction BiPolar Junction Transistor-based (HBT-based) structures can be designed for use as follows: (1) HBT-based Die Level Process Monitor (DLPM) structure to characterize the effect of process variations on base-emitter voltage (VBE); (2) HBT-based Radiation Effect Prognostic Monitor (RadEPM) to characterize the effect of Total Ionization Dose (TID) radiation on VBE, and (3) HBT-based Band-Gap Reference (BGR) to characterize the effect of process variations and TID radiation on a reference voltage. 2. Design and simulate the proposed HBT-based circuits for the IBM trusted foundry 65-nm Bipolar Complementary Metal-Oxide Semiconductor (BiCMOS) Silicon-Germanium (SiGe) process. 3. Create schematics and perform PSPICE simulations.  4. Apply suitable Radiation-Hardened by Design (RHBD) methods and techniques to each of the three HBT-based circuits to produce a dual set of proposed structures: one non-Rad-Hard, the other RHBD.  5. Show the Merit of the above solutions with respect to the development of radiation hardened (Rad-Hard) deep submicron logic.  6. Make a recommendation as which, if any, existing 65-nm CMOS silicon design should be realized as 65-nm BiCMOS SiGe circuits in a Phase II period for this topic. BENEFIT: The research is on the use of 65-nm HBT circuit structures as monitors to provide information on the effects of process variations and radiation on critical device and circuit parameters. The information is used to characterize those changes so design engineers can better center their designs.  Well-centered designs increase yield and reliability, both of which are of concern in deep submicron radiation-hardened designs for communications.

* Information listed above is at the time of submission. *

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