SI Diamond Technology Inc

Company Information

Company Name
SI Diamond Technology Inc
Address
2435 North Blvd
Houston, TX, 77098
Phone
n/a
URL
n/a
DUNS
n/a
Number of Employees
n/a
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N

Award Totals

PROGRAM/PHASE
AWARD AMOUNT ($)
NUMBER OF AWARDS
SBIR Phase I
$1,002,375.00
17
SBIR Phase II
$591,823.00
1
Chart code to be here

Award List

  1. Method fro advanced production techniques for in-line deposition

    Amount: $591,823.00

    WE PROPOSE AN INNOVATIVE APPROACH WHICH LEADS TO THICK TUNGSTEN WIRES FULLY EMBEDDED IN SOLID DIAMOND SLAB. IN THIS APPROACH, THIN FILMS OF CHEMICAL VAPOR DOPOSITION (CVD) DIAMOND ARE COATED WITH A RE ...

    SBIR Phase II 1995 Missile Defense AgencyDepartment of Defense
  2. Liquid Metal Cluster Ion Source For Repair Of Packaging

    Amount: $51,045.00

    WE PROPOSE THE DEVELOPMENT OF A DIRECT METAL ETCH AND WRITE (DMEW) TECHNOLOGY BASED ON RECENTLY DEVELOPED LIQUID METAL CLUSTER ION SOURCES (LMCIS) FOR REPAIR OF CONDUCTING PATHS IN POLYCERAMIC SYSTEM. ...

    SBIR Phase I 1993 Missile Defense AgencyDepartment of Defense
  3. Affordable High-field Spacers For Field Emitter Displays

    Amount: $55,727.00

    Field Emitter Displays (FEDs) represent the "leap frog" technology which can rebuild America's dominance in the information display industry. This represents simultaneously a critical technology area ...

    SBIR Phase I 1993 Defense Advanced Research Projects AgencyDepartment of Defense
  4. Metal Doped Diamond as a Laser Material

    Amount: $49,324.00

    DOPED SINGLE CRYSTAL DIAMOND IS A PROMISING MATERIAL UPON WHICH TO BASE A NEW CLASS OF SOLID STATE LASERS AND OPTICAL DEVICES OPERATING AT HIGHER POWER DENSITIES AND SHORTER WAVELENGHTS THAN CONVENTIO ...

    SBIR Phase I 1993 Missile Defense AgencyDepartment of Defense
  5. Large Area Single Crystal Cubic Boron Nitride Growth

    Amount: $50,247.00

    WIDE BANDGAP MATERIALS SUCH AS CUBIC BORON NITRIDE HOLD SIGNIFICANT PROMISE FOR ADVANCED APPLICATIONS SUCH AS UV LASERS AND DETECTORS, AS WELL AS HIGH TEMPERATURE, HIGH PERFORMANCE ELECTRONIC DEVICES. ...

    SBIR Phase I 1993 Missile Defense AgencyDepartment of Defense
  6. High Power Diamond Cold Cathode

    Amount: $53,937.00

    WE PROPOSE DEVELOPMENT OF HIGH PERFORMANCE COLD CATHODES BASED ON OUR RECENTLY INVENTED DIAMOND FIELD EMISSION THIN FILMS. THE DIAMOND COLD CATHODES OFFER HIGHER STABILITY, LARGER EMISSION SITE DENSIT ...

    SBIR Phase I 1993 Missile Defense AgencyDepartment of Defense
  7. Large Area Single Crystal Diamond Growth

    Amount: $51,554.00

    DIAMOND EXHIBITS PHYSICAL PROPERTIES THAT MAKE IT AN IDEAL MATERIAL FROM WHICH TO CONSTRUCT ELECTRONIC DEVICES FOR HIGH TEMPERATURE, HIGH FREQUENCY AND/OR HIGH RADIATION APPLICATIONS. TO REALIZE THE S ...

    SBIR Phase I 1993 Missile Defense AgencyDepartment of Defense
  8. NOVEL FIELD EMISSION ELECTRON SOURCE

    Amount: $49,935.00

    A NOVEL DIAMOND-LIKE CARBON COATING HAS BEEN DEVELOPED THAT HAS AN EXTREMELY LOW WORK FUNCTION. USING A PROPRIETARY DEPOSITION METHOD, THIS MATERIAL CAN BE COATED ON A VARIETY OF METAL AND CERAMIC PAR ...

    SBIR Phase I 1993 National Science Foundation
  9. Boron Nitride Coating Process Oxidation Resistant Tribological

    Amount: $54,501.00

    A NEW PLASMA ASSISTED CHEMICAL VAPOR DEPOSITION (CVD0 PROCESS ACHIEVES PHENOMENALLY HIGH GROWTH RATES, EXCELLENT ADHESION AND UNIQUELY CONTROLLABLE MICROSTRUCTURES IN LOW-Z CUBIC MATERIALS AT ATMOSPHE ...

    SBIR Phase I 1994 Missile Defense AgencyDepartment of Defense
  10. Laser-based Diamond Boule Growth

    Amount: $54,501.00

    A NEW LASER-BASED DIAMOND GROWTH TECHNIQUE HAS BEEN SHOWN TO DELIVER GROWTH RATES HIGHER THAN ANY OTHER KNOWN TECHNIQUE. THE TECHNIQUE, BECAUSE OF ITS UNIQUE "CONTAINERLESS PROCESSING", SHOULD PROVE V ...

    SBIR Phase I 1994 Missile Defense AgencyDepartment of Defense

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