Method fro advanced production techniques for in-line deposition

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$591,823.00
Award Year:
1995
Program:
SBIR
Phase:
Phase II
Contract:
n/a
Agency Tracking Number:
19690
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
Si Diamond Technology, Inc.
2435 North Blvd, Houston, TX, 77098
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Howard K. Schmidt, Phd
(713) 529-9040
Business Contact:
() -
Research Institution:
n/a
Abstract
WE PROPOSE AN INNOVATIVE APPROACH WHICH LEADS TO THICK TUNGSTEN WIRES FULLY EMBEDDED IN SOLID DIAMOND SLAB. IN THIS APPROACH, THIN FILMS OF CHEMICAL VAPOR DOPOSITION (CVD) DIAMOND ARE COATED WITH A REFRACTORY METAL AND THE METAL IS PATTERNED. THESE PATTERNED LAYERS FILMS ARE STACKED AND PROPERLY ALIGNED, AFTER WHICH THEY ARE JOINED TOGETHER BY PLACING THE STACK IN A DIAMOND CVD CHAMBER. THE INTERLAYER VIAS ARE MADE BY EITHER LASER DRILLING OR BY REACTIVE ION ETCHING AND THE VIAS ARE FILED BY TUNGSTEN CVD. THE TOP METAL LAYER CAN BE PATTERNED TO CREATE THE COMPLETE INTERCONNECT BOARD. THE OBJECTIVE OF THE PHASE I PROJECT IS TO EXAMINE THE FEASIBILITY OF THIS CONCEPT BY BUILDING A TWO LAYER STACK OF DIAMOND-METAL INTERCONNECTS. WE WILL DEMONSTRATE A COMPLETE VERY HIGH THERMAL PERFORMANCE DIAMOND-METAL MULTI-LAYER INTERCONNECT TECHNOLOGY AND DO ELECTRICAL AND THERMAL PERFORMANCE TESTS IN THE PHASE II OF THIS PROJECT.

* information listed above is at the time of submission.

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