IN SITU CHARACTERIZATION OF DIAMOND SURFACES DURING LOW PRESSURE CHEMICAL VAPOR DEPOSITION

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$500,000.00
Award Year:
1990
Program:
SBIR
Phase:
Phase II
Contract:
n/a
Award Id:
10125
Agency Tracking Number:
10125
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
2474 Bolsover - Ste 234, Houston, TX, 77005
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Dr Howard K Schmidt
(713) 529-9040
Business Contact:
() -
Research Institute:
n/a
Abstract
THE CHEMICAL MECHANISMS OF CHEMICAL VAPOR DEPOSITION (CVD) OF DIAMOND AND OTHER ELECTRONIC MATERIALS ARE AT BEST POORLYUNDERSTOOD. DURING PHASE I, WE SHALL CONSTRUCT A LOW PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD) REACTOR EQUIPPED WITH AN ION BEAM SURFACE PROBE AND DEMONSTRATE ITS UTILITY IN DETERMINING SURFACE STOICHIOMETRIES UNDER ACTUAL DEPOSITION CONDITIONS IN-SITU. THE GOAL IS TO PERFECT AND USE SUCH EQUIPMENT TO INVESTIGATE THE MECHANISM AND KINETICSOF HOMO-EPITAXIAL DIAMOND GROWTH. INSIGHTS INTO THE DEPOSITION CHEMISTRY OF DIAMOND OBTAINED BY THIS METHOD WILLENABLE THE DEVELOPMENT OF IMPROVED TECHNIQUES FOR MANUFACTURING SINGLE CRYSTAL DIAMOND FILM. NEW ELECTRONIC APPLICATIONS OF DIAMOND MAY BECOME PRACTICAL AND COMMERCIALIZABLE AS A RESULT OF THIS EFFORT.

* information listed above is at the time of submission.

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