Improved Crystals for Optical Memories

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: N/A
Agency Tracking Number: 32257
Amount: $507,000.00
Phase: Phase II
Program: SBIR
Awards Year: 1998
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
310 Icepond Road, Bozeman, MT, 59715
DUNS: N/A
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Ralph L. Hutcheson
 (406) 585-3772
Business Contact
Phone: () -
Research Institution
N/A
Abstract
A Phase I research program is proposed with two primary technical objectives that are critical to the development of real optical memory devices based on solid state materials. The first objective will be to characterize striae in optical memory materials and subsequently grow improved reduced striae crystals. Striae is currently limiting the performance of technololgies based on these materials. Researchers involved in optical memory systems have conveyed that this is one of the largest technical issues associated with the viability of these systems. The second objective is to develop a commercial source of materials for research in photon-gated holeburning. This technique has the potential for permanent storage, has nondestructive readout of the data, and is the most feasible for higher temperature operation of devices based on persistent spectral holeburning.

* Information listed above is at the time of submission. *

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