NUMERICAL SIMULATION OF HIGH SPEED HETEROSTRUCTURE BIPOLAR TRANSISTORS

Award Information
Agency:
Department of Defense
Branch:
Air Force
Amount:
$492,000.00
Award Year:
1986
Program:
SBIR
Phase:
Phase II
Contract:
N/A
Agency Tracking Number:
2097
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Scientific Research Associates
Po Box 498, Glastonbury, CT, 06033
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
N/A
Principal Investigator
 Harold L Grubin
 (203) 659-0333
Business Contact
Phone: () -
Research Institution
N/A
Abstract
THIS DOCUMENT DISCUSSES A PROPOSED PROGRAM FOR THE TWO DIMENSIONAL NUMERICAL SIMULATION OF A HETEROJUNCTION ALGAAS/GAAS BIPOLAR TRANSISTOR WITH A WIDE-GAP EMITTER. HBT'S OFFER CONSIDERABLE REDUCTION IN SWITCHING SPEEDS AND IMPROVEMENTS IN CUT-OFF FREQUENCIES OVER THEIR HOMOJUNCTION COUNTERPARTS AND MAY ULTIMATELY PROVIDE SIGNIFICANT COMPETITION TO HIGH ELECTRON MOBILITY TRANSISTOR IN SWITCHING SPEEDS AT ROOM TEMPERATURE. HBT'S FABRICATED USING MBE TECHNOLOGY HAVE BEEN REPORTED TO OPERATE AT CUT-OFF FREQUENCIES ABOVE 10GHZ, AND VALUES AS HIGH AS 100GHZ, ARE EXPECTED FROM OPTIMIZED STRUCTURES. THE KEY TO ACHIEVING THE ANTICIPATED HIGH FREQUENCY PERFORMANCE IS THE ABILITY TO PROVIDE INFORMATION ON DEVICE CHARACTERISTICS AND OPTIMIZATION OF THE CONTROLLING PRIOR TO FABRICATION. THIS PROPOSAL ADDRESSES THE ABOVE NEEDS VIA NUMERICAL SIMULATION. IT IS PROPOSED TO EXAMINE THE ELECTRICAL CHARACTERISTICS OF AN ALGAAS/GAAS HBT VIA THE SOLUTION OF DRIFT AND DIFFUSION EQUATIONS IN TWO DIMENSIONS. ALSO ADDRESSED HERE, IS THE EFFECT OF GRADING THE HETEROSTRUCTURE BIPOLAR DEVICES.

* information listed above is at the time of submission.

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