VECTORIZED THREE DIMENSIONAL TRANSIENT SEU SIMULATIONS-APPLICATIONS TO GALLIUM ARSENIDE FETS

Award Information
Agency:
Department of Defense
Branch:
Missile Defense Agency
Amount:
$477,000.00
Award Year:
1988
Program:
SBIR
Phase:
Phase II
Contract:
N/A
Agency Tracking Number:
4354
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Scientific Research Associates
P.o. Box 498 50 Nye Rd., Glastonbury, CT, 06033
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
N/A
Principal Investigator
 Harold L. Grubin
 (203) 659-0333
Business Contact
Phone: () -
Research Institution
N/A
Abstract
SINGLE EVENT UPSETS (SEUS) INDUCED BY IONIZING RADIATION CONSTITUTE ONE OF THE MOST PRESSING PROBLEMS OF SEMICONDUCTOR TECHNOLOGY. AN UNDERSTANDING OF THE PHYSICAL MECHANISMS ASSOCIATED WITH CHARGE COLLECTION HAS ALREADY FURTHERED THE DEVELOPMENT OF HARDENING PROCEDURES. THIS UNDERSTANDING HAS DEVELOPED, IN LARGE PART THROUGH IMPLEMENTATION OF TRANSIENT NUMERICAL SIMULATIONS OF SEUS. HOWEVER, AT PRESENT, THERE EXISTS WITHIN THE UNITED STATES ENGINEERING AND SCIENTIFIC COMMUNITY, A STUMBLING BLOCK TO THE FURTHER DEVELOPMENT OF EFFICIENT METHODS OF HARDENING. THIS STUMBLING BLOCK IS THE ABSENCE OF A THREE DIMENSIONAL ALGORITHM THAT SIMULTANEOUSLY SATISFIES THE FOLLOWING TWO CRITERIA: 1) THE ABILITY TO PERFORM THREE DIMENSIONAL TRANSIENT SIMULATIONS OF SEUS, AND 2) THE CAPABILITY OF PERFORMING THESE SIMULATIONS WITHIN AN ACCEPTABLE TIMEFRAME. THIS CAPABILITY EXISTS IN JAPAN AS A RECENT STUDY INDICATES. THE ENCLOSED PROPOSAL DESCRIBES A PROGRAM FOR VECTORIZING AN EXISTING THREE DIMENSIONAL TRANSIENT ALGORITHM WITH A DEMONSTRATED CAPABILITY OF STUDYING THE TRANSIENT RESPONSE OF SEMICONDUCTORS TO INCIDENT IONIZING RADIATION. VECTORIZATION WILL REDUCE RUN-TIME BY AT LEAST AN ORDER OF MAGNITUDE, THEREBY MAKING THE ALGORITHM OF PRACTICAL SIGNIFICANCE IN THE DEVELOPMENT OF HARDENING PROCEDURES. THE FEASIBILITY OF THE VECTOR THREE DIMENSIONAL TRANSIENT SEU ALGORITHM WILL BE DEMONSTATED BY STUDYING THE RESPONSE OF A GALLIUM ARSENIDE (GAAS) JUNCTION FILED EFFORT TRANSISTOR TO INCIDENT IONIZING RADIATION.

* information listed above is at the time of submission.

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