SEMICONDUCTING DIAMOND ELECTRONIC DEVICES

Award Information
Agency:
Department of Defense
Amount:
$500,000.00
Program:
SBIR
Contract:
N/A
Solitcitation Year:
N/A
Solicitation Number:
N/A
Branch:
Missile Defense Agency
Award Year:
1989
Phase:
Phase II
Agency Tracking Number:
6387
Solicitation Topic Code:
N/A
Small Business Information
Scientific Research Associates
Po Box 1058 - 50 Nye Rd, Glastonbury, CT, 06033
Hubzone Owned:
N
Woman Owned:
N
Socially and Economically Disadvantaged:
N
Duns:
N/A
Principal Investigator
 Harold L Grubin
 (203) 659-0333
Business Contact
Phone: () -
Research Institution
N/A
Abstract
RECENT TECHNOLOGY ADVANCES HAVE DEMONSTRATED THE POSSIBILITY OF FABRICATING SATISFACTORY ELECTRONIC DIAMOND FILMS IN REASONABLE QUANTITIES. AS A CONSEQUENCE OF THIS, OLDER DESIGNS ARE BEING REWORKED AND NEW DEVICE STRUCTURES DEVELOPED THAT TAKE ADVANTAGE OF THE SEMICONDUCTING DIAMOND. HOWEVER, IT HAS BEEN THE EXPERIENCE OF THE SEMICONDUCTING COMMUNITY THAT DESIGN FEATURES SUITABLE FOR ONE SEMICONDUCTOR SYSTEM DO NOT DIRECTLY CARRY-OVER TO ANOTHER. NEW APPROACHES ARE REQUIRED TO TAILOR SPECIFIC DEVICE STRUCTURES TO THE PROPERTIES OF DIAMOND AND THE PRESENT STATE OF DIAMOND TECHNOLOGY. NUMERICAL SIMULATIONS OF DIAMOND DEVICES ARE BEING PERFORMED THROUGH IMPLEMENTATION OF A DRIFT AND DIFFUSION EQUATION ALGORITHM. TWO STRUCTURES ARE BEING CONSIDERED, THE DIAMOND PERMEABLE BASE TRANSISTORAND A DIAMOND FIELD EFFECT TRANSISTOR. THE PERMEABLE BASE TRANSISTOR IS P-TYPE, AND THE DIAMOND FIELD EFFECT TRANSISTOR IS BEING EXAMINED FOR THE EFFECTS OF CONTACTS PROPERTIES ON THE CURRENT VOLTAGE CHARACTERISTICS. ADDITIONALLY, TRANSIENT NONEQUILIBRIUM CHARACTERISTICS OF DIAMOND ARE BEING OBTAINED.

* information listed above is at the time of submission.

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