PROCESS MODELING OF MAGNETRON REACTIVE ION ETCHING (MIE) - APPLICATIONS TO GAAS AND ALGAAS

Award Information
Agency:
Department of Defense
Branch:
Army
Amount:
$499,000.00
Award Year:
1988
Program:
SBIR
Phase:
Phase II
Contract:
N/A
Agency Tracking Number:
6389
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Scientific Research Associates
Po Box 1058 - 50 Nye Rd, Glastonbury, CT, 06033
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
N/A
Principal Investigator
 M Meyyappan
 (203) 659-0333
Business Contact
Phone: () -
Research Institution
N/A
Abstract
THIS DOCUMENT DISCUSSES A PROPOSAL TO PERFORM PROCESS MODELING, VIA NUMERICAL SIMULATION, OF MAGNETRON REACTIVE ION ETCHING (MIE) PROCESS WITH APPLICATIONS TO ETCHING OF GAAS, ALGAAS AND OTHER III-IV COMPOUNDS. THE KEY ISSUES ARE UNDERSTANDING OF FLOW DYNAMICS, EFFECTS OF MAGNETIC FIELD ON FLOW DYNAMICS, AND PLASMA KINETICS. MIE PROCESS HAS A LARGE NUMBER OF PARAMETERS. IT IS NOT WELL KNOWN PRESENT HOW VARIOUS SYSTEM PARAMETERS SUCH AS PRESSURE, RF POWER, MAGNETIC FIELD STRENGTH, FLOW RATE, SYSTEM GEOMETRY, TEMPERATURE AND TYPE OF PLASMA AFFECT ETCH RATE, SELECTIVITY AND VOLTAGE REQUIREMENTS. MIE PROCESS ALSO IS DIFFICULT TO SCALE UP DUE TO COMPLEXITY OF PHYSICAL AND CHEMICAL PROCESSES INVOLVED. THIS PROPOSAL ADDRESSES THE ABOVE ISSUES, THROUGH NUMERICAL SOLUTIONS TO THE GOVERNING NONISOTHERMAL NAVIER-STOKES AND SPECIES CONTINUITY EQUATIONS. SURFACE REACTION KINETICS FOR THE ETCHING OG GAAS IS INCLUDED.

* information listed above is at the time of submission.

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