Opto-Electronic Components from Non-stochiometric III-V Materials

Award Information
Agency:
Department of Defense
Branch
Air Force
Amount:
$59,960.00
Award Year:
1994
Program:
SBIR
Phase:
Phase I
Contract:
n/a
Award Id:
26052
Agency Tracking Number:
26052
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
P.o. Box 1058, Glastonbury, CT, 06033
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Harold L. Grubin
(203) 659-0333
Business Contact:
() -
Research Institution:
n/a
Abstract
The progress in modern communications systems depends upon the availability of high-bnadwidth, high-reponsivity photo-detectors. Most electronic communications circuits are still silicon based due to the established fabridcation technology. However, GaAs photo-dtectors can offer bandwidth and responsivity improvements over compearable silicon devices if they are integrated directly into silicon circuits. Low termperature(LT) grown GaAs is a novel material that has generated considerable research interest since the demonstration of excellent optoelectronic properties. recently, studies of LT GaAs grown on silicon substrates demonstrated carrier lifetime less than 0.5ps, providing a realistic marriage of GaAs photonics with silicon electronics. It is this obsservatiion that probides the opportunity described in this proposal for a joint study beween SRA and Purdue U. to design and fabricate photo-conductors of LT GaAs on silicon, and begin a study that may provide an additional path to successful integration of gallium arsenide and silicon for high speed opto-electronics.

* information listed above is at the time of submission.

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