SemiSouth Laboratories

Basic Information

201 Research Blvd.
Starkville, MS, -

http://www.semisouth.com

Company Profile

n/a

Additional Details

Field Value
DUNS: 622392111
Hubzone Owned: N
Socially and Economically Disadvantaged: N
Woman Owned: N
Number of Employees: 59


  1. Optically Gated, Silicon Carbide (SiC) Semiconductors for Aircraft Electrical Actuator Motor Drives

    Amount: $749,934.00

    SemiSouth Laboratories, Inc., a leading developer and manufacturer of silicon carbide (SiC) power semiconductor devices, OptiSwitch Technology Corporation, a leading developer and manufacturer of ligh ...

    SBIR Phase II 2010 Department of DefenseAir ForceDepartment of Defense
  2. Optically Gated, Silicon Carbide (SiC) Semiconductors for Aircraft Electrical Actuator Motor Drives

    Amount: $99,711.00

    SemiSouth Laboratories, Inc., a leading developer and manufacturer of silicon carbide (SiC) power semiconductor devices, and OptiSwitch Technology Corporation, a leading developer and manufacturer of ...

    SBIR Phase I 2009 Air ForceDepartment of DefenseDepartment of Defense
  3. Scalable Solid-State Circuit Breaker (SSCB)

    Amount: $99,935.00

    Solid-state circuit breakers have significant advantage over electromechanically relays due to the use of various types of solid-state transistors used to control the power flow. These transistors ar ...

    SBIR Phase I 2008 Department of DefenseArmyDepartment of Defense
  4. High Voltage High Frequency Switch

    Amount: $69,771.00

    SemiSouth Laboratories, Inc. (SemiSouth), a leading developer and manufacturer of silicon carbide (SiC) power-electronics device technology, proposes the development of a low-cost hybrid switch based ...

    SBIR Phase I 2008 NavyDepartment of DefenseDepartment of Defense
  5. An Innovative Silicon Carbide (SiC) 6-KV, 1-KA Gate Turn Off (GTO) Thyristor

    Amount: $99,992.00

    A high-voltage, high-current, SiC power switch is required by the existing utility infrastructure and its need to interconnect renewable energy sources to the grid (such as wind and solar photovoltaic ...

    SBIR Phase I 2007 Department of Energy
  6. Decentralized Nonlinear Controller Based SiC Parallel DC-DC Converter

    Amount: $69,982.00

    This proposal is aimed at demonstrating the feasibility of a Decentralized Control based SiC Parallel DC-DC Converter Unit (DDCU) with targeted application for NASA's International Space Station Progr ...

    SBIR Phase I 2005 National Aeronautics and Space Administration
  7. 500?C SiC JFET Driver Circuits and Packaging

    Amount: $69,979.00

    In the proposed development, SiC JFET control circuitry and normally-off SiC JFET power switch will be integrated in a single SiC chip that will provide digital output for driving piezoelectric, elect ...

    SBIR Phase I 2005 National Aeronautics and Space Administration
  8. Development of Silicon Carbide Thick Epitaxy with High Growth Rate and Near-Perfect Surface for Megawatt Switching Applications

    Amount: $750,000.00

    A thick SiC epitaxy process was demonstrated by SemiSouth in Phase I, as the growth (or deposition) rate was boosted from 5 um/h to 20 um/h, and thickness uniformity was kept to 5% or below. In the P ...

    SBIR Phase II 2005 Defense Advanced Research Projects AgencyDepartment of DefenseDepartment of Defense
  9. Development of Radiation Hard 4H-SiC Power Switches and Rectifiers for Circuit Applications In Harsh Environments

    Amount: $749,988.00

    Several new high-power, long range radar systems are under development for near-term upgrades or fielding by MDA, Navy, and Marine Corps, which will use High Voltage GaAs or new WBG Semiconductors (Si ...

    STTR Phase II 2005 Missile Defense AgencyDepartment of DefenseDepartment of Defense
  10. Insertion of an L-band SiC Static Induction Transistor into Missile Defense Radars

    Amount: $750,000.00

    SemiSouth proposes to prototype proprietary self-aligned L-band SiC Static Induction Transistors, with 400 V gate-to-drain breakdown voltage, for radar transmitters. A minimum of 14 wafers will be pr ...

    SBIR Phase II 2004 Missile Defense AgencyDepartment of DefenseDepartment of Defense

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