SemiSouth Laboratories

Company Information

Company Name
SemiSouth Laboratories
Address
201 Research Blvd.
Starkville, MS, -
Phone
1 662-324-7607
URL
http://www.semisouth.com
DUNS
622392111
Number of Employees
59
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N

Award Totals

PROGRAM/PHASE
AWARD AMOUNT ($)
NUMBER OF AWARDS
SBIR Phase I
$1,019,833.00
12
SBIR Phase II
$2,999,934.00
4
STTR Phase I
$170,000.00
3
STTR Phase II
$1,249,988.00
2

Award List

  1. Optically Gated, Silicon Carbide (SiC) Semiconductors for Aircraft Electrical Actuator Motor Drives

    Amount: $749,934.00

    SemiSouth Laboratories, Inc., a leading developer and manufacturer of silicon carbide (SiC) power semiconductor devices, OptiSwitch Technology Corporation, a leading developer and manufacturer of ligh ...

    SBIR Phase II 2010 Department of Defense
  2. Vertical SiC Static Induction Transistor for L-band

    Amount: $750,000.00

    The Static Induction Transistor (SIT) is a vertical MESFET or JFET type device, which has the gates close together resulting in space charge limited current conduction. Unlike a bipolar junction trans ...

    SBIR Phase II 2003 Missile Defense AgencyDepartment of Defense
  3. Vertical Silicon Carbide Transistors for High Power Transmitters (UHF-S-band)

    Amount: $71,465.00

    Silicon Carbide microwave transistors have yet to realize their full potentialwith regard to signal fidelity, junction operating temperature, and reasonablemanufacturing costs. In this proposal we pr ...

    SBIR Phase I 2001 Missile Defense AgencyDepartment of Defense
  4. Deep-Level-Free SiC Semi-Insulating Buffer Layers for High-Power RF Transistors 02-014A

    Amount: $70,000.00

    "SemiSouth proposes a proprietary technology involving the passivation of one type of shallow acceptor impurity to achieve precision compensation of the opposite type of shallow donor impurity. This ...

    SBIR Phase I 2002 Missile Defense AgencyDepartment of Defense
  5. Radiation and temperature-tolerant SiC JFET technologies for Space-Based Systems

    Amount: $70,000.00

    SiC JFET technology for control IC's in space based systems enable the possibility of temperature-tolerant, rugged, radiation-hard circuit operation. Additionally, it offers the possibility of combin ...

    STTR Phase I 2002 Missile Defense AgencyDepartment of Defense
  6. Insertion of an L-band SiC Static Induction Transistor into Missile Defense Radars

    Amount: $750,000.00

    SemiSouth proposes to prototype proprietary self-aligned L-band SiC Static Induction Transistors, with 400 V gate-to-drain breakdown voltage, for radar transmitters. A minimum of 14 wafers will be pr ...

    SBIR Phase II 2004 Missile Defense AgencyDepartment of Defense
  7. Insertion of an L-band SiC Static Induction Transistor into Missile Defense Radars

    Amount: $70,000.00

    The goal of this proposal is to lay the ground work for the insertion of SiC static induction transistors (SIT) in missle defense radars. The insertion of SiC SIT's would increase system reliability a ...

    SBIR Phase I 2003 Missile Defense AgencyDepartment of Defense
  8. High Current and Voltage Diodes for Power Switching

    Amount: $100,000.00

    The goal of this proposal is to study the feasibility SiC rectifiers in high-voltage, high total current applications. Specifically, the Schottky barrier diode (SBD), JBS diode (JBS), and PiN diode d ...

    SBIR Phase I 2002 Office of the Secretary of DefenseDepartment of Defense
  9. Development of Silicon Carbide Thick Epitaxy with High Growth Rate and Near-Perfect Surface for Megawatt Switching Applications

    Amount: $750,000.00

    A thick SiC epitaxy process was demonstrated by SemiSouth in Phase I, as the growth (or deposition) rate was boosted from 5 um/h to 20 um/h, and thickness uniformity was kept to 5% or below. In the P ...

    SBIR Phase II 2005 Defense Advanced Research Projects AgencyDepartment of Defense
  10. Thick SiC Epitaxy Development for MegaWatt Switching Applications

    Amount: $99,000.00

    In this proposed work, methods to increase the growth rate for thick, low-doped drift region epilayers required for MW power switch devices are examined. Changing the process parameters (carrier and ...

    SBIR Phase I 2004 Air ForceDepartment of Defense

Agency Micro-sites


SBA logo

Department of Agriculture logo

Department of Commerce logo

Department of Defense logo

Department of Education logo

Department of Energy logo

Department of Health and Human Services logo

Department of Homeland Security logo

Department of Transportation logo

Enviromental Protection Agency logo

National Aeronautics and Space Administration logo

National Science Foundation logo
US Flag An Official Website of the United States Government