Vertical SiC Static Induction Transistor for L-band

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: N0001402C0217
Agency Tracking Number: 01-0254
Amount: $750,000.00
Phase: Phase II
Program: SBIR
Awards Year: 2003
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
SEMISOUTH LABORATORIES
One Research Blvd., Suite 201B, Starkville, MS, 39759
DUNS: 622392111
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Igor Sankin
 Senior Device Engineer
 (662) 324-7607
 igor.sankin@semisouth.com
Business Contact
 Kelly Cutshall
Title: Comptroller
Phone: (662) 324-7607
Email: kelly.cutshall@semisouth.com
Research Institution
N/A
Abstract
The Static Induction Transistor (SIT) is a vertical MESFET or JFET type device, which has the gates close together resulting in space charge limited current conduction. Unlike a bipolar junction transistor (BJT), the SIT is a majority carrier device, isvoltage-controlled, and often gives higher breakdown voltage and input impedance. While most SIT development has occurred in Si, renewed interest in the use of SiC SIT's over the past 10 years has occurred because of SiC's superior material properties. Byuse of SiC, it is possible to increase the voltage (and thus power) rating of high-frequency amplifiers, and increase the power density by a factor of 4 to 10 in UHF to S-band transistors.In this SBIR phase II project, a new SiC SIT for L-band power applications will be created. Submicron dimensions needed to get useful gain in L- and S-band will be obtained by use a self-aligned process, which employs the same mask for the source fingerdefinition, source contact, and formation of the gate.The proposed SiC SIT will incorporate a self-aligned process which will provide significant improvement in yield and device performance. L-band power applications will benefit from a SiC SIT because of the higher power density, higher operating voltage andhigher projected operating temperature of SiC devices. Potential commercial applications include radar systems and cellular base stations.

* information listed above is at the time of submission.

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