Vertical Silicon Carbide Transistors for High Power Transmitters (UHF-S-band)

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: N00014-01-M-0169
Agency Tracking Number: 01-0254
Amount: $71,465.00
Phase: Phase I
Program: SBIR
Awards Year: 2001
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
1891 Chapel Hill Road, Starkville, MS, 39759
DUNS: 622392111
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Janna Dufrene
 Device Engineer
 (662) 615-4973
Business Contact
 Jeffrey Casady
Title: Vice-Pres. Device Engr.
Phone: (662) 325-3669
Research Institution
Silicon Carbide microwave transistors have yet to realize their full potentialwith regard to signal fidelity, junction operating temperature, and reasonablemanufacturing costs. In this proposal we present new innovative approaches ofsolving these pressing problems through the use of advanced epitaxy materialgrowth concepts combined with unique device design. Specifically, new approacheswith respect to the design and fabrication of SiC Bipolar Junction Transistors(BJTs) and Static Induction Transistors (SITs) for use from UHF to S-band areexplored, with emphasis on high junction temperature operation with reliablemetallurgical schemes for packaging and device performance.It is anticipated that these devices will have significant impact on the expandingcellular phone base stations, HDTV transmitters, and PCS base stations. Thesemarkets range from UHF to S-band, and are experiencing high annual growth rates,with total market value in the hundreds of millions of dollars. These applicationsall have similar requirements to the military systems for which these products arebeing developed.

* Information listed above is at the time of submission. *

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