Deep-Level-Free SiC Semi-Insulating Buffer Layers for High-Power RF Transistors 02-014A

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$70,000.00
Award Year:
2002
Program:
SBIR
Phase:
Phase I
Contract:
DASG60-02-P-0029
Award Id:
59012
Agency Tracking Number:
02-0802
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
One Research Blvd., Suite 201B, Starkville, MS, 39759
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
602374951
Principal Investigator:
John Glesener
VP of Epi Products
(662) 324-7607
john.glesener@semisouth.com
Business Contact:
Kelly Cutshall
Comptroller
(662) 324-7607
kelly.cutshall@semisouth.com
Research Institution:
n/a
Abstract
"SemiSouth proposes a proprietary technology involving the passivation of one type of shallow acceptor impurity to achieve precision compensation of the opposite type of shallow donor impurity. This Phase I feasibility demonstration represents aninnovative breakthrough in deep-level-free semi-insulating (SI) buffer layers for high-performance, economical silicon carbide radio-frequency (RF) MEtal Semiconductor Field Effect Transistors (MESFET). Semi-insulating materials are widely used inelectronics, which is especially so in RF applications. SI materials are now commercially available in SiC as substrates with very high bulk resistivity. However, RF MESFET's are known to be susceptible to electrical instabilities arising from the deepenergy levels intentionally introduced into all currently practical SI material. The deep energy levels are necessary to compensate, meaning to electrically offset, the shallow doping impurities to produce very high electrical resistance. These same deeplevels produce trapping effects that are responsible for the electrical instabilities. Until now, it was not practical to create semi-insulating buffer layers by using "shallow" dopants of one type (say aluminum acceptors in SiC) to compensate shallowdopants of another type (say nitrogen donors in SiC) with sufficient precision to produce deep-level-free SI buffer layers. The approach developed by SemiSouth reduces or eliminates the electrical inst

* information listed above is at the time of submission.

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