Radiation and temperature-tolerant SiC JFET technologies for Space-Based Systems

Award Information
Agency:
Department of Defense
Amount:
$70,000.00
Program:
STTR
Contract:
F33615-02-M-5429
Solitcitation Year:
N/A
Solicitation Number:
N/A
Branch:
Missile Defense Agency
Award Year:
2002
Phase:
Phase I
Agency Tracking Number:
02-0119T
Solicitation Topic Code:
N/A
Small Business Information
Semisouth Laboratories
One Research Blvd., Suite 201B, Starkville, MS, 39759
Hubzone Owned:
N
Woman Owned:
N
Socially and Economically Disadvantaged:
N
Duns:
622392111
Principal Investigator
 Janna Dufrene
 Device Engineer
 (662) 324-7607
 janna.dufrene@semisouth.com
Business Contact
 Kelly Cutshall
Title: Controller
Phone: (662) 324-7607
Email: kelly.cutshall@semisouth.com
Research Institution
 Mississippi State University
 J.B. Casady
 Box 9571 - ECE Department, Hardy Road
Mississippi State, MS, 39762
 (662) 325-3669
 Nonprofit college or university
Abstract
SiC JFET technology for control IC's in space based systems enable the possibility of temperature-tolerant, rugged, radiation-hard circuit operation. Additionally, it offers the possibility of combining with SiC power devices, a high level of integration,reduced parts count, reduced cost and weight in satellite systems. SemiSouth Laboratories, Inc. plans to transfer critical JFET IC technology developed at Mississippi State University to prototype status, and work with key DoD customers to provide earlyadaptation of the technology. Will further SiC I.C. development, especially in integrated control electronics which are needed for high-temperature sensors and power modulators under distributed control.

* information listed above is at the time of submission.

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