Insertion of an L-band SiC Static Induction Transistor into Missile Defense Radars

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$750,000.00
Award Year:
2004
Program:
SBIR
Phase:
Phase II
Contract:
FA8650-04-C-5437
Agency Tracking Number:
022-0548
Solicitation Year:
2002
Solicitation Topic Code:
MDA02-021b
Solicitation Number:
2002.2
Small Business Information
SEMISOUTH LABORATORIES
One Research Blvd., Suite 201B, Starkville, MS, 39759
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
622392111
Principal Investigator:
Janna Casady
SiC Device Program Manage
(662) 324-7607
janna.casady@semisouth.com
Business Contact:
Brenda Temple
Senior Corporate Accounta
(662) 324-7607
brenda.temple@semisouth.com
Research Institution:
n/a
Abstract
SemiSouth proposes to prototype proprietary self-aligned L-band SiC Static Induction Transistors, with 400 V gate-to-drain breakdown voltage, for radar transmitters. A minimum of 14 wafers will be processed, allowing for thousands of parts to be delivered to system integrators. Parts will be delivered to system integrators, load-pull RF tested, and feedback will be used to modify process and layout design to meet transmitter module requirements. Further improvements (smoother ohmic contact metals, improved etch/epi uniformity) will be implemented in the self-aligned process, which will increase yield. Cost, cycle time, and yield will be monitored and reported for each lot.

* information listed above is at the time of submission.

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