High Current and Voltage Diodes for Power Switching

Award Information
Agency:
Department of Defense
Branch
Navy
Amount:
$100,000.00
Award Year:
2002
Program:
SBIR
Phase:
Phase I
Contract:
N00014-03-M-0058
Agency Tracking Number:
O022-0330
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
Semisouth Laboratories
One Research Blvd., Suite 201B, Starkville, MS, 39759
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Igor Sankin
Senior Device Engineer
(662) 324-7607
igor.sankin@semisouth.com
Business Contact:
Kelly Cutshall
Comptroller
(662) 324-7607
kelly.cutshall@semisouth.com
Research Institution:
n/a
Abstract
The goal of this proposal is to study the feasibility SiC rectifiers in high-voltage, high total current applications. Specifically, the Schottky barrier diode (SBD), JBS diode (JBS), and PiN diode device structures will be studied with strengths andweaknesses of each approach examined based on the system application needs and SiC material maturity. The insertion of SiC into high total current switch mode power supply (SMPS) motor controllers would significantly increase efficiency of electricvehicles. In addition, SiC rectifiers would allow for increased switching frequency of the SMPS, which would lead to smaller and lighter passive circuit components. Potential commercial applications of this technology include high total current SMPS foruse in electric, hybrid-electric vehicles. General anticipated benefits are also derived from increasing the industrial base of SiC discrete device and epitaxy suppliers, which will provide market infrastructure to help support DoD and commercial systeminsertion.

* information listed above is at the time of submission.

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