Development of Silicon Carbide Thick Epitaxy with High Growth Rate and Near-Perfect Surface for Megawatt Switching Applications

Award Information
Agency:
Department of Defense
Branch
Defense Advanced Research Projects Agency
Amount:
$750,000.00
Award Year:
2005
Program:
SBIR
Phase:
Phase II
Contract:
FA8650-05-C-7209
Agency Tracking Number:
D032-0490
Solicitation Year:
2003
Solicitation Topic Code:
SB032-044
Solicitation Number:
2003.2
Small Business Information
SEMISOUTH LABORATORIES
201 Research Blvd., Starkville, MS, 39759
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
622392111
Principal Investigator:
Janna Casady
SiC Device Program Manage
(662) 324-7607
janna.casady@semisouth.com
Business Contact:
Brenda Temple
Senior Corporate Accounta
(662) 324-7607
brenda.temple@semisouth.com
Research Institution:
n/a
Abstract
A thick SiC epitaxy process was demonstrated by SemiSouth in Phase I, as the growth (or deposition) rate was boosted from 5 um/h to 20 um/h, and thickness uniformity was kept to 5% or below. In the Phase 2 effort, it is proposed that the processes be developed for production by re-designing and optimizing the reactor susceptor in a research reactor to minimize cost and risk. Specifically, the surface morphology will be improved to near perfect finish as a result of this process development, while maintaining a very high (15-30 um/h) growth rate needed for economical production and minimizing risk to production reactor systems. Once optimized, the process will be transferred to the production system and offered as a product, enabling a MegaWatt class of SiC devices to emerge in the marketplace.

* information listed above is at the time of submission.

Agency Micro-sites

US Flag An Official Website of the United States Government