Development of Silicon Carbide Thick Epitaxy with High Growth Rate and Near-Perfect Surface for Megawatt Switching Applications

Award Information
Agency: Department of Defense
Branch: Defense Advanced Research Projects Agency
Contract: FA8650-05-C-7209
Agency Tracking Number: D032-0490
Amount: $750,000.00
Phase: Phase II
Program: SBIR
Awards Year: 2005
Solicitation Year: 2003
Solicitation Topic Code: SB032-044
Solicitation Number: 2003.2
Small Business Information
201 Research Blvd., Starkville, MS, 39759
DUNS: 622392111
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Janna Casady
 SiC Device Program Manage
 (662) 324-7607
Business Contact
 Brenda Temple
Title: Senior Corporate Accounta
Phone: (662) 324-7607
Research Institution
A thick SiC epitaxy process was demonstrated by SemiSouth in Phase I, as the growth (or deposition) rate was boosted from 5 um/h to 20 um/h, and thickness uniformity was kept to 5% or below. In the Phase 2 effort, it is proposed that the processes be developed for production by re-designing and optimizing the reactor susceptor in a research reactor to minimize cost and risk. Specifically, the surface morphology will be improved to near perfect finish as a result of this process development, while maintaining a very high (15-30 um/h) growth rate needed for economical production and minimizing risk to production reactor systems. Once optimized, the process will be transferred to the production system and offered as a product, enabling a MegaWatt class of SiC devices to emerge in the marketplace.

* information listed above is at the time of submission.

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