Thick SiC Epitaxy Development for MegaWatt Switching Applications

Award Information
Agency:
Department of Defense
Branch
Air Force
Amount:
$99,000.00
Award Year:
2004
Program:
SBIR
Phase:
Phase I
Contract:
FA8650-04-M-7105
Agency Tracking Number:
D032-0490
Solicitation Year:
2003
Solicitation Topic Code:
SB032-044
Solicitation Number:
2003.2
Small Business Information
SEMISOUTH LABORATORIES
One Research Blvd., Suite 201B, Starkville, MS, 39759
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
622392111
Principal Investigator:
Jie Zhang
Director of Epitaxy Produ
(662) 324-7607
jie.zhang@semisouth.com
Business Contact:
Kelly Cutshall
Treasurer
(662) 324-7607
kelly.cutshall@semisouth.com
Research Institution:
n/a
Abstract
In this proposed work, methods to increase the growth rate for thick, low-doped drift region epilayers required for MW power switch devices are examined. Changing the process parameters (carrier and feed gas ratios, gas flow rates, pressure, temperature) to increase the growth rate are balanced with keeping process parameters such that surface morphology is not compromised is the primary goal of this work. Additionally, maintaining dopant control, low background impurity, and the possibility of closing micropipe defects are examined to maintain the quality of the thick epitaxy layers. This work is done in a horizontal configuration reactor, designed for SiC epitaxy growth.

* information listed above is at the time of submission.

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