Thick SiC Epitaxy Development for MegaWatt Switching Applications

Award Information
Agency: Department of Defense
Branch: Air Force
Contract: FA8650-04-M-7105
Agency Tracking Number: D032-0490
Amount: $99,000.00
Phase: Phase I
Program: SBIR
Awards Year: 2004
Solicitation Year: 2003
Solicitation Topic Code: SB032-044
Solicitation Number: 2003.2
Small Business Information
One Research Blvd., Suite 201B, Starkville, MS, 39759
DUNS: 622392111
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Jie Zhang
 Director of Epitaxy Produ
 (662) 324-7607
Business Contact
 Kelly Cutshall
Title: Treasurer
Phone: (662) 324-7607
Research Institution
In this proposed work, methods to increase the growth rate for thick, low-doped drift region epilayers required for MW power switch devices are examined. Changing the process parameters (carrier and feed gas ratios, gas flow rates, pressure, temperature) to increase the growth rate are balanced with keeping process parameters such that surface morphology is not compromised is the primary goal of this work. Additionally, maintaining dopant control, low background impurity, and the possibility of closing micropipe defects are examined to maintain the quality of the thick epitaxy layers. This work is done in a horizontal configuration reactor, designed for SiC epitaxy growth.

* Information listed above is at the time of submission. *

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