Self-aligned L-band SiC Power MESFET with Improved Current Stability for Ballistic Missile Defense Systems

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: FA8650-04-M-5424
Agency Tracking Number: B041-039-1473
Amount: $100,000.00
Phase: Phase I
Program: SBIR
Awards Year: 2004
Solicitation Year: 2004
Solicitation Topic Code: MDA04-039
Solicitation Number: 2004.1
Small Business Information
One Research Blvd., Suite 201B, Starkville, MS, 39759
DUNS: 622392111
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Igor Sankin
 Senior Device Engineer
 (662) 324-7607
Business Contact
 Janna Casady
Title: SiC Device Program Manage
Phone: (662) 324-7607
Research Institution
In coordination with other ONR and MDA sponsored SiC MESFET development, SemiSouth proposes development of an improved, L or S-band designed SiC MESFET which focuses on a self-aligned process. This self-aligned process requires development of a high-uniformity gate recess etch and an improved, smoother surface silicide process. This work complements ongoing work involving a major prime contractor on SiC MESFET's for long-range radar systems, where SemiSouth is focused on developing highly uniform MESFET epitaxy layers, and SiC MESFET passivation schemes.

* Information listed above is at the time of submission. *

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