Self-aligned L-band SiC Power MESFET with Improved Current Stability for Ballistic Missile Defense Systems

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$100,000.00
Award Year:
2004
Program:
SBIR
Phase:
Phase I
Contract:
FA8650-04-M-5424
Agency Tracking Number:
B041-039-1473
Solicitation Year:
2004
Solicitation Topic Code:
MDA04-039
Solicitation Number:
2004.1
Small Business Information
SEMISOUTH LABORATORIES
One Research Blvd., Suite 201B, Starkville, MS, 39759
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
622392111
Principal Investigator:
Igor Sankin
Senior Device Engineer
(662) 324-7607
igor.sankin@semisouth.com
Business Contact:
Janna Casady
SiC Device Program Manage
(662) 324-7607
janna.casady@semisouth.com
Research Institution:
n/a
Abstract
In coordination with other ONR and MDA sponsored SiC MESFET development, SemiSouth proposes development of an improved, L or S-band designed SiC MESFET which focuses on a self-aligned process. This self-aligned process requires development of a high-uniformity gate recess etch and an improved, smoother surface silicide process. This work complements ongoing work involving a major prime contractor on SiC MESFET's for long-range radar systems, where SemiSouth is focused on developing highly uniform MESFET epitaxy layers, and SiC MESFET passivation schemes.

* information listed above is at the time of submission.

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