Development of Radiation Hard 4H-SiC Power Switches and Rectifiers for Circuit Applications In Harsh Environments

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: W9113M-05-C-0204
Agency Tracking Number: B045-019-0252
Amount: $749,988.00
Phase: Phase II
Program: STTR
Awards Year: 2005
Solitcitation Year: 2004
Solitcitation Topic Code: MDA04-T019
Solitcitation Number: N/A
Small Business Information
SEMISOUTH LABORATORIES
201 Research Blvd., Starkville, MS, 39759
Duns: 622392111
Hubzone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Janna Casady
 SiC Device Program Manager
 (662) 324-7607
 janna.casady@semisouth.com
Business Contact
 Brenda Temple
Title: Contracts Administrator
Phone: (662) 324-7607
Email: brenda.temple@semisouth.com
Research Institution
 AUBURN UNIV.
 John Williams
 310 Leach Scien
Auburn, AL, 36849
 (334) 844-4678
 Nonprofit college or university
Abstract
ABSTRACT: Several new high-power, long range radar systems are under development for near-term upgrades or fielding by MDA, Navy, and Marine Corps, which will use High Voltage GaAs or new WBG Semiconductors (SiC, GaN) in the transmitter/receiver. These systems will require compact, efficient, temperature tolerant power supplies and converters typically requiring a 600 V class of power devices. SiC is a logical candidate for such applications. However, reliable and affordable device technology is essential to realize the theoretical benefits of SiC in these critical applications. In order to determine if SiC is ready for insertion in these applications, this Phase II will fabricate devices using SemiSouth 4H-SiC VJFET and SBD technology designed to meet the current, voltage, high temperature, and radiation hardness required for MDA radar power supply applications. These parts will then be tested individually in high temperature and high radiation environments and then tested in a circuit of direct relevance to the applications above. The results of this work will provide a fact based timeline for insertion of SiC devices for power conditioning applications that will extend past the applications listed here into many other applications such as motor drives for more or all electric aircraft.

* information listed above is at the time of submission.

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