Development of Radiation Hard 4H-SiC Power Switches and Rectifiers for Circuit Applications In Harsh Environments

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$100,000.00
Award Year:
2004
Program:
STTR
Phase:
Phase I
Contract:
HQ0006-04-C-7106
Agency Tracking Number:
B045-019-0252
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
SEMISOUTH LABORATORIES
One Research Blvd., Suite 201B, Starkville, MS, 39759
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
622392111
Principal Investigator:
Janna Casady
SiC Device Program Manager
(662) 324-7607
janna.casady@semisouth.com
Business Contact:
Brenda Temple
Senior Corporate Accountant
(662) 324-7607
brenda.temple@semisouth.com
Research Institution:
Auburn University
John Williams
310 Leach Science Center
Auburn, AL, 36849
(334) 844-4678
Nonprofit college or university
Abstract
SiC power switch devices such as Vertical Junction Field Effect Transistors (VJFETs) and Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) are being developed for power conditioning applications in a variety of rugged environments. While the SiC devices have been well characterized for high-temperature behavior, much less data is available for radiation effects, including gamma and proton radiation. Here, SemiSouth, Auburn, and Georgia Tech propose testing of SemiSouth SiC VJFETs and Auburn MOSFETs over a temperature range of ambient to 300C, both DC and dynamic testing, done pre- and post-radiation test. Gamma radiation will be from a Co 60 source, at 1.33 MeV, and the proton radiation will be from 1-4 MeV and 63 MeV. The analyis will help steer the development of radiation-hardened SiC switches in Phase II.

* information listed above is at the time of submission.

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