Development of Radiation Hard 4H-SiC Power Switches and Rectifiers for Circuit Applications In Harsh Environments

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: HQ0006-04-C-7106
Agency Tracking Number: B045-019-0252
Amount: $100,000.00
Phase: Phase I
Program: STTR
Awards Year: 2004
Solicitation Year: 2004
Solicitation Topic Code: MDA04-T019
Solicitation Number: N/A
Small Business Information
One Research Blvd., Suite 201B, Starkville, MS, 39759
DUNS: 622392111
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Janna Casady
 SiC Device Program Manager
 (662) 324-7607
Business Contact
 Brenda Temple
Title: Senior Corporate Accountant
Phone: (662) 324-7607
Research Institution
 Auburn University
 John Williams
 310 Leach Science Center
Auburn, AL, 36849
 (334) 844-4678
 Nonprofit college or university
SiC power switch devices such as Vertical Junction Field Effect Transistors (VJFETs) and Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) are being developed for power conditioning applications in a variety of rugged environments. While the SiC devices have been well characterized for high-temperature behavior, much less data is available for radiation effects, including gamma and proton radiation. Here, SemiSouth, Auburn, and Georgia Tech propose testing of SemiSouth SiC VJFETs and Auburn MOSFETs over a temperature range of ambient to 300C, both DC and dynamic testing, done pre- and post-radiation test. Gamma radiation will be from a Co 60 source, at 1.33 MeV, and the proton radiation will be from 1-4 MeV and 63 MeV. The analyis will help steer the development of radiation-hardened SiC switches in Phase II.

* Information listed above is at the time of submission. *

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