Radiation and temperature-tolerant SiC JFET technologies for Space-Based Systems

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$500,000.00
Award Year:
2004
Program:
STTR
Phase:
Phase II
Contract:
FA8650-04-C-5435
Agency Tracking Number:
B2-0551
Solicitation Year:
2002
Solicitation Topic Code:
BMDO02T-00
Solicitation Number:
n/a
Small Business Information
SEMISOUTH LABORATORIES
One Research Blvd., Suite 201B, Starkville, MS, 39759
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
622392111
Principal Investigator:
Igor Sankin
Senior Device Engineer
(662) 324-7607
Igor.Sankin@SemiSouth.com
Business Contact:
Kelly Cutshall
Treasurer
(662) 324-7607
Kelly.Cutshall@SemiSouth.com
Research Institution:
Mississippi State University
Robyn Remotigue
PO Box 6156 - Sponsored Prog, Mississippi State Un
Mississippi State, MS, 39762
(662) 325-7397
Nonprofit college or university
Abstract
SiC Integrated Circuits (IC''s) offer the potential for operation over a wide temperature range (77 K to 800 K), and high-radiation environments. In this proposal, we outline a program to transfer and mature patented SiC epitaxy and device technology for use in SiC JFET IC''s from Mississippi State University to SemiSouth Laboratories. The result will be precise controlled epitaxy layers (doping and thickness) in SiC, with abrupt transitions between n-type channel and heavily doped p-type gate regions, as well as demonstration of JFET IC''s in SiC.

* information listed above is at the time of submission.

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