Radiation and temperature-tolerant SiC JFET technologies for Space-Based Systems

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: FA8650-04-C-5435
Agency Tracking Number: B2-0551
Amount: $500,000.00
Phase: Phase II
Program: STTR
Awards Year: 2004
Solicitation Year: 2002
Solicitation Topic Code: BMDO02T-00
Solicitation Number: N/A
Small Business Information
One Research Blvd., Suite 201B, Starkville, MS, 39759
DUNS: 622392111
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Igor Sankin
 Senior Device Engineer
 (662) 324-7607
 Igor.Sankin@SemiSouth.com
Business Contact
 Kelly Cutshall
Title: Treasurer
Phone: (662) 324-7607
Email: Kelly.Cutshall@SemiSouth.com
Research Institution
 Mississippi State University
 Robyn Remotigue
 PO Box 6156 - Sponsored Prog, Mississippi State Un
Mississippi State, MS, 39762
 (662) 325-7397
 Nonprofit college or university
Abstract
SiC Integrated Circuits (IC''s) offer the potential for operation over a wide temperature range (77 K to 800 K), and high-radiation environments. In this proposal, we outline a program to transfer and mature patented SiC epitaxy and device technology for use in SiC JFET IC''s from Mississippi State University to SemiSouth Laboratories. The result will be precise controlled epitaxy layers (doping and thickness) in SiC, with abrupt transitions between n-type channel and heavily doped p-type gate regions, as well as demonstration of JFET IC''s in SiC.

* Information listed above is at the time of submission. *

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