High Voltage High Frequency Switch

Award Information
Agency: Department of Defense
Branch: Navy
Contract: N66001-08-M-1061
Agency Tracking Number: N073-197-0644
Amount: $69,771.00
Phase: Phase I
Program: SBIR
Awards Year: 2008
Solicitation Year: 2007
Solicitation Topic Code: N07-197
Solicitation Number: 2007.3
Small Business Information
201 Research Blvd., Starkville, MS, 39759
DUNS: 622392111
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Adndrew Ritenour
 Senior Device Engineer
 (662) 324-7607
 andrew.ritenour@semisouth.com
Business Contact
 Brenda Temple
Title: Contracts Administrator
Phone: (662) 324-7607
Email: brenda.temple@semisouth.com
Research Institution
N/A
Abstract
SemiSouth Laboratories, Inc. (SemiSouth), a leading developer and manufacturer of silicon carbide (SiC) power-electronics device technology, proposes the development of a low-cost hybrid switch based on the company’s silicon carbide high-voltage junction field effect transistor (JFET) products. SemiSouth has two principal objectives for Phase I. First, to establish the feasibility of the proposed four-terminal switch by building a 1.5 kV prototype using available 1.6-kV SiC JFETs and COTS electronic components that provide the electrical isolation between the control inputs and the high-voltage outputs; and second to scale the design of the current 1.6-kV SiC JFET to 2-kV in preparation for a possible Phase II effort.

* Information listed above is at the time of submission. *

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