High Voltage High Frequency Switch

Award Information
Agency:
Department of Defense
Branch
Navy
Amount:
$69,771.00
Award Year:
2008
Program:
SBIR
Phase:
Phase I
Contract:
N66001-08-M-1061
Award Id:
87385
Agency Tracking Number:
N073-197-0644
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
201 Research Blvd., Starkville, MS, 39759
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
622392111
Principal Investigator:
Adndrew Ritenour
Senior Device Engineer
(662) 324-7607
andrew.ritenour@semisouth.com
Business Contact:
Brenda Temple
Contracts Administrator
(662) 324-7607
brenda.temple@semisouth.com
Research Institution:
n/a
Abstract
SemiSouth Laboratories, Inc. (SemiSouth), a leading developer and manufacturer of silicon carbide (SiC) power-electronics device technology, proposes the development of a low-cost hybrid switch based on the company's silicon carbide high-voltage junction field effect transistor (JFET) products. SemiSouth has two principal objectives for Phase I. First, to establish the feasibility of the proposed four-terminal switch by building a 1.5 kV prototype using available 1.6-kV SiC JFETs and COTS electronic components that provide the electrical isolation between the control inputs and the high-voltage outputs; and second to scale the design of the current 1.6-kV SiC JFET to 2-kV in preparation for a possible Phase II effort.

* information listed above is at the time of submission.

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