Sensor Electronic Technology, Inc.

Basic Information

1195 Atlas Road
Columbia, SC, 29209-

http://www.s-et.com

Company Profile

n/a

Additional Details

Field Value
DUNS: 135907686
Hubzone Owned: N
Socially and Economically Disadvantaged: N
Woman Owned: N
Number of Employees: 82


  1. GaN High-Power Low-Loss C3-varactor RF switch MMIC

    Amount: $79,974.00

    WWe propose to develop novel low-loss high-power fully planar GaN C3 (Capacitively-Coupled-Contact) varactor RF switch MMIC with switching time well below 300 ns. The use of GaN material system offers ...

    SBIR Phase I 2014 NavyDepartment of DefenseDepartment of Defense
  2. Scalable, Wide Bandgap Integrated Circuit Technology for Wide Temperature, Harsh Environment Applications

    Amount: $149,959.00

    ABSTRACT: We propose to develop novel high-temperature robust control ICs compatible with power SiC device using on insulated gate III-Nitride transistors MISHFETs - over SiC native nitride substrat ...

    SBIR Phase I 2013 Air ForceDepartment of DefenseDepartment of Defense
  3. Normally-OFF AlInN/GaN MISHFET with composite channel

    Amount: $79,938.00

    We propose to develop new key building blocks for next generation power electronics based on III-Nitride semiconductor technology. High-voltage, low-loss, normally-off III-Nitride insulated gate hete ...

    SBIR Phase I 2012 Department of DefenseNavyDepartment of Defense
  4. Ultraviolet Communication for Medical Applications

    Amount: $99,950.00

    Deep ultraviolet LEDs will be developed and tested for customized application. Medical Communication system will be studied and prototyped with use of Solid State Components. Optical, thermal, electri ...

    SBIR Phase I 2012 Department of DefenseArmyDepartment of Defense
  5. AlInN/GaN HFET over Free-Standing bulk GaN substrates

    Amount: $999,859.00

    This proposed research for Phase II consideration involves the growth of AlInN/GaN heterostructure field effect transistors (HFET) on bulk GaN substrates. By combining a homoepitaxial substrate for t ...

    STTR Phase II 2012 Missile Defense AgencyDepartment of DefenseDepartment of Defense
  6. SBIR Phase I: Development of UV-B SLED and LD

    Amount: $149,951.00

    This Small Business Innovation Research Phase I project will develop innovative edge emitting superluminescent light emitting diodes (SLED) and laser diodes (LD) with emission in the UV-B spectral ran ...

    SBIR Phase I 2010 National Science Foundation
  7. SBIR Phase II: Deep UV LED with High Quality p-AlInGaN Layers by Digital Doping Control

    Amount: $534,765.00

    This Small Business Innovation Research Phase II project will develop and commercialize next-generation high-power deep ultraviolet light emitting diodes (DUV LEDs) with high quality p-type doped AlIn ...

    SBIR Phase II 2010 National Science Foundation
  8. SBIR Phase II:UV LED Lamp Based Water Disinfection for POU Compact Purification Systems

    Amount: $475,227.00

    This SBIR Phase I project will establish a commercial water disinfection system based on the use of light emitting diodes that would be appropriate for use in residential settings. The Phase II effor ...

    SBIR Phase II 2010 National Science Foundation
  9. Semiconductor Ultraviolet Irradiation Devices for Greenhouse Crops

    Amount: $89,958.00

    We propose developing, manufacturing, fielding and validating environmentally friendly, energy efficient revolutionary ultraviolet irradiation devices (UID) to improve nutritional value of greenhouse ...

    SBIR Phase I 2010 Department of Agriculture
  10. AlInN/GaN HFET over Free-Standing bulk GaN substrates

    Amount: $99,963.00

    SET, Inc. proposes to develop lattice-matched AlInN/GaN HFET structure on free-standing GaN substrate. By employing native low-defect GaN substrates and by using lattice-matched heterostructures with ...

    STTR Phase I 2010 Missile Defense AgencyDepartment of DefenseDepartment of Defense

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