Large Periphery AllnGaN-Gan MOSHFET Device For High Power X-Band Microwave Amplifiers

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$908,800.00
Award Year:
2005
Program:
SBIR
Phase:
Phase II
Contract:
F33615-01-C-1911
Award Id:
47543
Agency Tracking Number:
00-0771
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
21 Cavalier Way, Latham, NY, 12110
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
135907686
Principal Investigator:
Remis Gaska
President and CEO
(518) 783-8986
gaska@s-et.com
Business Contact:
Michael Shur
Vice-President
(518) 783-0608
Shure@b-i-ts.com
Research Institution:
n/a
Abstract
We propose to develop submicron gate large periphery AllnGaN-Gan based metal-oxide semiconductor heterojunction field-effect transistors (MOSHFET) as a building block for high-power (>20W), high frequency (x-band) amplifiers.

* information listed above is at the time of submission.

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