Large Periphery AllnGaN-Gan MOSHFET Device For High Power X-Band Microwave Amplifiers

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: F33615-01-C-1911
Agency Tracking Number: 00-0771
Amount: $908,800.00
Phase: Phase II
Program: SBIR
Awards Year: 2005
Solitcitation Year: 2000
Solitcitation Topic Code: MDA00-014
Solitcitation Number: 2000.3
Small Business Information
SENSOR ELECTRONIC TECHNOLOGY, INC.
21 Cavalier Way, Latham, NY, 12110
Duns: 135907686
Hubzone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Remis Gaska
 President and CEO
 (518) 783-8986
 gaska@s-et.com
Business Contact
 Michael Shur
Title: Vice-President
Phone: (518) 783-0608
Email: Shure@b-i-ts.com
Research Institution
N/A
Abstract
We propose to develop submicron gate large periphery AllnGaN-Gan based metal-oxide semiconductor heterojunction field-effect transistors (MOSHFET) as a building block for high-power (>20W), high frequency (x-band) amplifiers.

* information listed above is at the time of submission.

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