Large Periphery AllnGaN-Gan MOSHFET Device For High Power X-Band Microwave Amplifiers

Award Information
Agency:
Department of Defense
Amount:
$908,800.00
Program:
SBIR
Contract:
F33615-01-C-1911
Solitcitation Year:
2000
Solicitation Number:
2000.3
Branch:
Missile Defense Agency
Award Year:
2005
Phase:
Phase II
Agency Tracking Number:
00-0771
Solicitation Topic Code:
MDA00-014
Small Business Information
SENSOR ELECTRONIC TECHNOLOGY, INC.
21 Cavalier Way, Latham, NY, 12110
Hubzone Owned:
N
Woman Owned:
N
Socially and Economically Disadvantaged:
N
Duns:
135907686
Principal Investigator
 Remis Gaska
 President and CEO
 (518) 783-8986
 gaska@s-et.com
Business Contact
 Michael Shur
Title: Vice-President
Phone: (518) 783-0608
Email: Shure@b-i-ts.com
Research Institution
N/A
Abstract
We propose to develop submicron gate large periphery AllnGaN-Gan based metal-oxide semiconductor heterojunction field-effect transistors (MOSHFET) as a building block for high-power (>20W), high frequency (x-band) amplifiers.

* information listed above is at the time of submission.

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