High Power AlInGaN-based Double Heterostructure Field Effect Transistor Over Bulk AlN Substrate Subtopic BMDO/02-214B

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: F3361503C5425
Agency Tracking Number: 02-1136
Amount: $749,678.00
Phase: Phase II
Program: SBIR
Awards Year: 2003
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
1195 Atlas Road, Columbia, SC, 29209
DUNS: 135907686
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Xuhong Hu
 Research Scientist
 (803) 647-9757
Business Contact
 Remis Gaska
Title: President and CEO
Phone: (803) 647-9757
Email: gaska@s-et.com
Research Institution
We propose to develop commercially viable material growth technology for manufacturing of AlInGaN-based Double Heterostructure Field Effect Transistor (DHFET) epitaxial wafers on single crystal bulk AlN substrates. The epitaxial wafers will be optimizedfor the development of high-power, high frequency (X-band) transistors as building blocks for a new generation of ultra-high microwave power amplifiers. The use of a bulk AlN substrate allows us to reduce the dislocation density in the epitaxial layers,and to have excellent thermal conductivity comparable to that of semi-insulating 4H-SiC. We expect that III-Nitride based transistors on bulk AlN substrates will exhibit major improvements in the lifetime and reliability without compromising thermalmanagement of high power devices. Our Phase I program proved the feasibility of the novel AlInGaN-based DHFET design over single crystal bulk AlN substrates. In Phase II, we plan to optimize AlInGaN/InGaN/AlN DHFET design in order to maximize microwavepower and scaleup material growth up to 2¿¿ diameter AlN substrates.

* Information listed above is at the time of submission. *

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