High Power AlInGaN-based Double Heterostructure Field Effect Transistor Over Bulk AlN Substrate Subtopic BMDO/02-214B

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$749,678.00
Award Year:
2003
Program:
SBIR
Phase:
Phase II
Contract:
F3361503C5425
Award Id:
59016
Agency Tracking Number:
02-1136
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
1195 Atlas Road, Columbia, SC, 29209
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
135907686
Principal Investigator:
Xuhong Hu
Research Scientist
(803) 647-9757
hu@s-et.com
Business Contact:
Remis Gaska
President and CEO
(803) 647-9757
gaska@s-et.com
Research Institution:
n/a
Abstract
We propose to develop commercially viable material growth technology for manufacturing of AlInGaN-based Double Heterostructure Field Effect Transistor (DHFET) epitaxial wafers on single crystal bulk AlN substrates. The epitaxial wafers will be optimizedfor the development of high-power, high frequency (X-band) transistors as building blocks for a new generation of ultra-high microwave power amplifiers. The use of a bulk AlN substrate allows us to reduce the dislocation density in the epitaxial layers,and to have excellent thermal conductivity comparable to that of semi-insulating 4H-SiC. We expect that III-Nitride based transistors on bulk AlN substrates will exhibit major improvements in the lifetime and reliability without compromising thermalmanagement of high power devices. Our Phase I program proved the feasibility of the novel AlInGaN-based DHFET design over single crystal bulk AlN substrates. In Phase II, we plan to optimize AlInGaN/InGaN/AlN DHFET design in order to maximize microwavepower and scaleup material growth up to 2¿¿ diameter AlN substrates.

* information listed above is at the time of submission.

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