High Power AlN/AlGaN/GaN Recessed Gate Heterostructure Field Effect Transistor

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$69,706.00
Award Year:
2002
Program:
SBIR
Phase:
Phase I
Contract:
DASG6003P0122
Award Id:
59184
Agency Tracking Number:
022-0651
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
1195 Atlas Road, Columbia, SC, 29209
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
135907686
Principal Investigator:
Xuhong Hu
Research Scientist
(803) 647-9757
hu@s-et.com
Business Contact:
Remis Gaska
President and CEO
(803) 647-9757
gaska@s-et.com
Research Institution:
n/a
Abstract
We propose to develop a new approach to recessed gate/active passivation AlGaN/GaN FET technology for the development of high-power AlN/AlGaN/GaN recessed gate Heterostructure Field Effect Transistors (HFET) for microwave amplifiers. We will use ourproprietary technology of the textured AlN thin film epitaxy by metal organic chemical vapor deposition (MOCVD) on AlGaN or AlN. The etching rate of this material is at least two orders of magnitude higher that the etching rate of our regular AlN or AlGaNlayer that can serve as an etch stop layer. Our preliminary capacitance voltage measurements demonstrate the increased sheet carrier densities and good pinch-off characteristics in the structures with such textured AlN layer. The thin textured AlN film canbe easily wet etched by diluted KOH. The etching rate and etching pattern can be well controlled. Silicon nitride passivation will be used to prevent AlN oxidation. Our approach will help to increase the power levels and decrease the size microwave power amplifiers, which is a key for the Transmit/Receive (T/R) module.

* information listed above is at the time of submission.

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