High Precision in-situ Thickness Control for Growing AlN/GaN/InN-based High Power Transistor Structures

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$69,740.00
Award Year:
2002
Program:
SBIR
Phase:
Phase I
Contract:
DASG6003P0123
Award Id:
59182
Agency Tracking Number:
022-0606
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
1195 Atlas Road, Columbia, SC, 29209
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
135907686
Principal Investigator:
OhalidFareed
Research Scientist
(803) 647-9757
fareed@s-et.com
Business Contact:
RemisGaska
President and CEO
(803) 647-9757
gaska@s-et.com
Research Institute:
n/a
Abstract
We will develop commercially viable AlN/GaN/InN-based epitaxial wafer technology for manufacturing of reliable high microwave power transistors and amplifiers for new generation T/R modules. This technology is based on the development of a reproducibleMOCVD epitaxial layer growth technology using novel high precision in-situ thickness control tools being developed by EMCORE Corp. We will combine our quaternary AlInGaN-based material growth expertise with the state-of-the-art MOCVD growth andcharacterization tools development at EMCORE. Recently, we demonstrated novel AlGaN/InGaN/GaN Double Heterostructure Field Effect Transistor design, which allowed us to suppress the current dispersion and dramatically increase the reliability of thedevices. Despite impressive achievements, production of these devices is impossible without availability of commercial material supply, particularly, of large size epitaxial wafers with highly reproducible material properties. This project will allow us toprecisely control the layer thickness of AlN/GaN/InN materials.

* information listed above is at the time of submission.

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