High Precision in-situ Thickness Control for Growing AlN/GaN/InN-based High Power Transistor Structures

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: DASG6003P0123
Agency Tracking Number: 022-0606
Amount: $69,740.00
Phase: Phase I
Program: SBIR
Awards Year: 2002
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
1195 Atlas Road, Columbia, SC, 29209
DUNS: 135907686
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Ohalid Fareed
 Research Scientist
 (803) 647-9757
Business Contact
 Remis Gaska
Title: President and CEO
Phone: (803) 647-9757
Email: gaska@s-et.com
Research Institution
We will develop commercially viable AlN/GaN/InN-based epitaxial wafer technology for manufacturing of reliable high microwave power transistors and amplifiers for new generation T/R modules. This technology is based on the development of a reproducibleMOCVD epitaxial layer growth technology using novel high precision in-situ thickness control tools being developed by EMCORE Corp. We will combine our quaternary AlInGaN-based material growth expertise with the state-of-the-art MOCVD growth andcharacterization tools development at EMCORE. Recently, we demonstrated novel AlGaN/InGaN/GaN Double Heterostructure Field Effect Transistor design, which allowed us to suppress the current dispersion and dramatically increase the reliability of thedevices. Despite impressive achievements, production of these devices is impossible without availability of commercial material supply, particularly, of large size epitaxial wafers with highly reproducible material properties. This project will allow us toprecisely control the layer thickness of AlN/GaN/InN materials.

* Information listed above is at the time of submission. *

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