Development of in-situ Temperature and Bowing Control Tools for AlInGaN-based High Power Transistor Structures

Award Information
Agency:
Department of Defense
Amount:
$69,740.00
Program:
SBIR
Contract:
DASG6003P0121
Solitcitation Year:
N/A
Solicitation Number:
N/A
Branch:
Missile Defense Agency
Award Year:
2002
Phase:
Phase I
Agency Tracking Number:
022-0613
Solicitation Topic Code:
N/A
Small Business Information
Sensor Electronic Technology, Inc.
1195 Atlas Road, Columbia, SC, 29209
Hubzone Owned:
N
Woman Owned:
N
Socially and Economically Disadvantaged:
N
Duns:
135907686
Principal Investigator
 Ohalid Fareed
 Research Scientist
 (803) 647-9757
 fareed@s-et.com
Business Contact
 Remis Gaska
Title: President and CEO
Phone: (803) 647-9757
Email: gaska@s-et.com
Research Institution
N/A
Abstract
We will develop commercially viable AlN/GaN/InN-based epitaxial wafer technology for manufacturing of reliable high microwave power transistors and amplifiers for new generation T/R modules. The technology will be based on the development of a reproducibleMOCVD epitaxial layer growth technology using novel high precision in-situ surface temperature and substrate bowing control tools being developed by EMCORE Corp. Recently, we demonstrated novel AlGaN/InGaN/GaN Double Heterostructure Field EffectTransistor design, which allowed us to suppress the current dispersion and dramatically increase the reliability of the devices. Despite impressive achievements, production of these devices is impossible without availability of commercial material supply,particularly, of large size epitaxial wafers with highly reproducible material properties. This project will allow us to precisely control the layer thickness of AlN/GaN/InN materials.

* information listed above is at the time of submission.

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