High Power AlInGaN-based Double Heterostructure Field Effect Transistor Over Bulk AlN Substrate Subtopic BMDO/02-214B

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: F33615-02-M-5424
Agency Tracking Number: 02-1136
Amount: $69,838.00
Phase: Phase I
Program: SBIR
Awards Year: 2002
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
21 Cavalier Way, Latham, NY, 12110
DUNS: 135907686
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Xuhong Hu
 Research Scientist
 (803) 647-9757
 hu@s-et.com
Business Contact
 Remis Gaska
Title: President and CEO
Phone: (518) 783-8936
Email: gaska@s-et.com
Research Institution
N/A
Abstract
We propose to evaluate the feasibility of single crystal bulk AlN substrates for the development of high-power, high-frequency III-Nitride Double Heterostructure Field Effect Transistors (DHFETs) as building blocks for microwave (X-band and higher)amplifiers. Higher reliability and increased life-time of high power transistors. Potential applications include T/R modules for phased array radars, base stations for next generation wireless communications

* Information listed above is at the time of submission. *

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