High Power AlInGaN-based Double Heterostructure Field Effect Transistor Over Bulk AlN Substrate Subtopic BMDO/02-214B

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$69,838.00
Award Year:
2002
Program:
SBIR
Phase:
Phase I
Contract:
F33615-02-M-5424
Award Id:
59016
Agency Tracking Number:
02-1136
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
21 Cavalier Way, Latham, NY, 12110
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
135907686
Principal Investigator:
Xuhong Hu
Research Scientist
(803) 647-9757
hu@s-et.com
Business Contact:
Remis Gaska
President and CEO
(518) 783-8936
gaska@s-et.com
Research Institute:
n/a
Abstract
We propose to evaluate the feasibility of single crystal bulk AlN substrates for the development of high-power, high-frequency III-Nitride Double Heterostructure Field Effect Transistors (DHFETs) as building blocks for microwave (X-band and higher)amplifiers. Higher reliability and increased life-time of high power transistors. Potential applications include T/R modules for phased array radars, base stations for next generation wireless communications

* information listed above is at the time of submission.

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