High Power AlInGaN-based Double Heterostructure Field Effect Transistor Over Bulk AlN Substrate Subtopic BMDO/02-214B

Award Information
Agency:
Department of Defense
Amount:
$69,838.00
Program:
SBIR
Contract:
F33615-02-M-5424
Solitcitation Year:
N/A
Solicitation Number:
N/A
Branch:
Missile Defense Agency
Award Year:
2002
Phase:
Phase I
Agency Tracking Number:
02-1136
Solicitation Topic Code:
N/A
Small Business Information
Sensor Electronic Technology, Inc.
21 Cavalier Way, Latham, NY, 12110
Hubzone Owned:
N
Woman Owned:
N
Socially and Economically Disadvantaged:
N
Duns:
135907686
Principal Investigator
 Xuhong Hu
 Research Scientist
 (803) 647-9757
 hu@s-et.com
Business Contact
 Remis Gaska
Title: President and CEO
Phone: (518) 783-8936
Email: gaska@s-et.com
Research Institution
N/A
Abstract
We propose to evaluate the feasibility of single crystal bulk AlN substrates for the development of high-power, high-frequency III-Nitride Double Heterostructure Field Effect Transistors (DHFETs) as building blocks for microwave (X-band and higher)amplifiers. Higher reliability and increased life-time of high power transistors. Potential applications include T/R modules for phased array radars, base stations for next generation wireless communications

* information listed above is at the time of submission.

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