AlInGaN-based Deep Ultraviolet Laser Diode Over Bulk AlN Substrates

Award Information
Agency: Department of Defense
Branch: Defense Advanced Research Projects Agency
Contract: DAAH0103CR022
Agency Tracking Number: 02SB2-0307
Amount: $98,234.00
Phase: Phase I
Program: SBIR
Awards Year: 2002
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
1195 Atlas Road, Columbia, SC, 29209
DUNS: 135907686
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Remis Gaska
 President and CEO
 (803) 647-9757
Business Contact
 Remis Gaska
Title: President and CEO
Phone: (803) 647-9757
Research Institution
We propose to develop technology for manufacturing deep ultraviolet (DUV) semiconductor Laser Diode (LDs) emitting in the spectral range of 250 nm. Blue and near UV (wavelength > 370 nm) light emitters are based on GaN/InGaN material system. In Phase I, wewill demonstrate LD structures with dislocation density below 107 cm-2, electroluminescence peak at 250 nm and stimulated emission at 250 nm under optical pumping. The obtained results will be used in the developing of the plan for Phase II.

* Information listed above is at the time of submission. *

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