AlInGaN-based Deep Ultraviolet Laser Diode Over Bulk AlN Substrates

Award Information
Agency:
Department of Defense
Branch
Defense Advanced Research Projects Agency
Amount:
$98,234.00
Award Year:
2002
Program:
SBIR
Phase:
Phase I
Contract:
DAAH0103CR022
Agency Tracking Number:
02SB2-0307
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
Sensor Electronic Technology, Inc.
1195 Atlas Road, Columbia, SC, 29209
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
135907686
Principal Investigator:
Remis Gaska
President and CEO
(803) 647-9757
gaska@s-et.com
Business Contact:
Remis Gaska
President and CEO
(803) 647-9757
gaska@s-et.com
Research Institution:
n/a
Abstract
We propose to develop technology for manufacturing deep ultraviolet (DUV) semiconductor Laser Diode (LDs) emitting in the spectral range of 250 nm. Blue and near UV (wavelength > 370 nm) light emitters are based on GaN/InGaN material system. In Phase I, wewill demonstrate LD structures with dislocation density below 107 cm-2, electroluminescence peak at 250 nm and stimulated emission at 250 nm under optical pumping. The obtained results will be used in the developing of the plan for Phase II.

* information listed above is at the time of submission.

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