GaN-AlInGaN Induced Base Transistors for High Power Microwave Amplifiers

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$69,902.00
Award Year:
2003
Program:
SBIR
Phase:
Phase I
Contract:
DASG6003P0266
Award Id:
64105
Agency Tracking Number:
031-1692
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
1195 Atlas Road, Columbia, SC, 29209
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
135907686
Principal Investigator:
XuhongHu
Research Scientist
(803) 647-9757
hu@s-et.com
Business Contact:
RemisGaska
President and CEO
(803) 647-9757
gaska@s-et.com
Research Institute:
n/a
Abstract
We propose to develop a new majority carrier device, Induced Base Transistor (IBT), which will use a very high density of the two-dimensional electron gas in GaN in order to dramatically reduce the base spreading resistance. We will use selective areagrowth technique for the deposition of emitter. The devices will be grown on bulk conductive GaN substrates (collector contact). The use of homoepitaxy will yield a much better materials quality (dislocation free) and will greatly enhance collector-emitterbreakdown voltage. In an IBT, the polarization induced electric field controls the barrier for the electron injection from the emitter into the base. We will design and optimize the device structure using the strain control by adjusting composition anddoping profiles in AlInGaN/GaN material system (Strain Energy Band Engineering Approach). Our approach will be used to increase transistor current density and microwave power level. We expect that IBT devices can become the key component for the MMICmodules. This technology will also have numerous commercial applications in low noise amplifiers for wireless communications.

* information listed above is at the time of submission.

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