High Power AlGaN/InGaN/AlGaN/GaN Recessed Gate Heterostructure Field Effect Transistor with InGaN as the RIE Etching Stop Layer

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: DASG6003P0256
Agency Tracking Number: 031-1419
Amount: $69,929.00
Phase: Phase I
Program: SBIR
Awards Year: 2003
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
1195 Atlas Road, Columbia, SC, 29209
DUNS: 135907686
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Xuhong Hu
 Research Scientist
 (803) 647-9757
Business Contact
 Remis Gaska
Title: President and CEO
Phone: (803) 647-9757
Email: gaska@s-et.com
Research Institution
We propose to a new approach AlGaN/GaN Heterostructure Field Effect Transistors (HFET) technology for reliable, stable, high-power microwave amplifiers using novel recessed gate/active passivation design. Under certain process conditions of BCl3 RIEetching for optimized InGaN films, the In etch product InCl3 will be formed on the surface stopping any further etching. The RIE etching rate of InGaN is much lower than the etching rate of AlGaN or GaN layers. Hence, InGaN can serve as RIE etch stoplayers. The thin InGaN film can be wet chemically etched by diluted KOH. The etching rate and etching pattern can be well controlled. The BCB passivation or Si3N4 passivation will be used to prevent AlGaN oxidation. Our approach will be used to improvethe breakdown voltage and output power for microwave power amplifiers, which is a key for the Transmit/Receive (T/R) module.

* Information listed above is at the time of submission. *

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