Hybrid Growth of High Quality AlInGaN-based Transistor Wafers on 6H-SiC

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$69,933.00
Award Year:
2003
Program:
SBIR
Phase:
Phase I
Contract:
DASG6003P0271
Award Id:
64108
Agency Tracking Number:
031-1668
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
1195 Atlas Road, Columbia, SC, 29209
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
135907686
Principal Investigator:
Qhalid Fareed
Research Scientist
(803) 647-9757
fareed@s-et.com
Business Contact:
Remis Gaska
President and CEO
(803) 647-9757
gaska@s-et.com
Research Institution:
n/a
Abstract
We will develop and scale-up a hybrid AlGaN/GaN Heterostructure Field Effect Transistor (HFET) wafer growth technology, which combines conventional MOCVD growth with our novel Pulsed Atomic Layer Epitaxy (PALE) deposition technique. In PALE deposition ofAlGaN-based heterostructures the metalorganic precursors TMA (Al-source), TMG (Ga-source) and NH3 (N-source) are alternately introduced in the low pressure MOCVD reactor. An ammonia pulse always follows the metalorganic pulses. Our InGaN-based layer fromPALE deposition demonstrates the advantages of improved mobility of pre-cursor species on the surface and better incorporation of the atoms into the growing crystal. The semi-insulating GaN buffer will be grown by conventional MOCVD followed by the PALEdeposition of the device channel (GaN, InGaN) and AlGaN barrier. The proposed technology would combine the advantages of high temperature and low temperature deposition in a single growth chamber. Our approach will be used to develop commercially viableepitaxial wafer technology for manufacturing of reliable high microwave power transistors and amplifiers for new generation of Transmit/Receive modules.

* information listed above is at the time of submission.

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