Hybrid Growth of High Quality AlInGaN-based Transistor Wafers on 6H-SiC

Award Information
Agency:
Department of Defense
Amount:
$69,933.00
Program:
SBIR
Contract:
DASG6003P0271
Solitcitation Year:
N/A
Solicitation Number:
N/A
Branch:
Missile Defense Agency
Award Year:
2003
Phase:
Phase I
Agency Tracking Number:
031-1668
Solicitation Topic Code:
N/A
Small Business Information
SENSOR ELECTRONIC TECHNOLOGY, INC.
1195 Atlas Road, Columbia, SC, 29209
Hubzone Owned:
N
Woman Owned:
N
Socially and Economically Disadvantaged:
N
Duns:
135907686
Principal Investigator
 Qhalid Fareed
 Research Scientist
 (803) 647-9757
 fareed@s-et.com
Business Contact
 Remis Gaska
Title: President and CEO
Phone: (803) 647-9757
Email: gaska@s-et.com
Research Institution
N/A
Abstract
We will develop and scale-up a hybrid AlGaN/GaN Heterostructure Field Effect Transistor (HFET) wafer growth technology, which combines conventional MOCVD growth with our novel Pulsed Atomic Layer Epitaxy (PALE) deposition technique. In PALE deposition ofAlGaN-based heterostructures the metalorganic precursors TMA (Al-source), TMG (Ga-source) and NH3 (N-source) are alternately introduced in the low pressure MOCVD reactor. An ammonia pulse always follows the metalorganic pulses. Our InGaN-based layer fromPALE deposition demonstrates the advantages of improved mobility of pre-cursor species on the surface and better incorporation of the atoms into the growing crystal. The semi-insulating GaN buffer will be grown by conventional MOCVD followed by the PALEdeposition of the device channel (GaN, InGaN) and AlGaN barrier. The proposed technology would combine the advantages of high temperature and low temperature deposition in a single growth chamber. Our approach will be used to develop commercially viableepitaxial wafer technology for manufacturing of reliable high microwave power transistors and amplifiers for new generation of Transmit/Receive modules.

* information listed above is at the time of submission.

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