Trap Engineering Technology for High-Reliability AlInGaN-based HFETs

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: DASG6003P0265
Agency Tracking Number: 031-1384
Amount: $69,542.00
Phase: Phase I
Program: SBIR
Awards Year: 2003
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
1195 Atlas Road, Columbia, SC, 29209
DUNS: 135907686
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Xuhong Hu
 Research Scientist
 (803) 647-9757
Business Contact
 Remis Gaska
Title: President and CEO
Phone: (803) 647-9757
Research Institution
The goal of this program is to develop commercially viable epitaxial wafer technology for manufacturing of reliable high microwave power transistors and amplifiers for new generation of Transmit/Receive modules using trap engineering technology. The newgeneration of III-Nitride HFETs will be less prone to current collapse and stability degradation. Deep traps are responsible for the current collapse and affect long-term stability of GaN devices. However, the quantitative understanding of the role oftraps in III-nitrides is limited. The proposed combined approach of technology CAD (TCAD) simulations and transistor testing will enable us to develop GaN device technology virtually immune to trap induced degradation. Our approach will be used to developquaternary AlInGaN-based epitaxial wafer manufacturing technology for fabrication of reliable high RF power transistors, which is a key for the Transmit/Receive (T/R) module.

* Information listed above is at the time of submission. *

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