Trap Engineering Technology for High-Reliability AlInGaN-based HFETs

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$69,542.00
Award Year:
2003
Program:
SBIR
Phase:
Phase I
Contract:
DASG6003P0265
Award Id:
64138
Agency Tracking Number:
031-1384
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
1195 Atlas Road, Columbia, SC, 29209
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
135907686
Principal Investigator:
XuhongHu
Research Scientist
(803) 647-9757
hu@s-et.com
Business Contact:
RemisGaska
President and CEO
(803) 647-9757
gaska@s-et.com
Research Institute:
n/a
Abstract
The goal of this program is to develop commercially viable epitaxial wafer technology for manufacturing of reliable high microwave power transistors and amplifiers for new generation of Transmit/Receive modules using trap engineering technology. The newgeneration of III-Nitride HFETs will be less prone to current collapse and stability degradation. Deep traps are responsible for the current collapse and affect long-term stability of GaN devices. However, the quantitative understanding of the role oftraps in III-nitrides is limited. The proposed combined approach of technology CAD (TCAD) simulations and transistor testing will enable us to develop GaN device technology virtually immune to trap induced degradation. Our approach will be used to developquaternary AlInGaN-based epitaxial wafer manufacturing technology for fabrication of reliable high RF power transistors, which is a key for the Transmit/Receive (T/R) module.

* information listed above is at the time of submission.

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