Solving Reliability and Stability Problems for AlGaN/GaN Heterostructure Field Effect Transistors using BCB Passivation Technology

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$69,929.00
Award Year:
2003
Program:
SBIR
Phase:
Phase I
Contract:
DASG6003P0226
Award Id:
64139
Agency Tracking Number:
031-1173
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
1195 Atlas Road, Columbia, SC, 29209
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
135907686
Principal Investigator:
XuhongHu
Research Scientist
(803) 647-9757
hu@s-et.com
Business Contact:
RemisGaska
President and CEO
(803) 647-9757
gaska@s-et.com
Research Institute:
n/a
Abstract
We propose to develop a new technology to AlGaN/GaN Heterostructure Field Effect Transistors (HFET) using benzocyclobutene (BCB) surface passivation process to improve microwave power and power added efficiency for the development of reliable and stablehigh-power AlGaN/GaN HFET microwave amplifiers. We will use this proprietary technology of the GaN-based BCB passivation for the fabrication of a more reliable and stable AlGaN/GaN HFETs. Similar to photoresist process, the BCB pattern can be wellcontrolled in the device fabrication. Comparing with conventional passivation, the BCB passivation technology has advantages of simple manufacturing process, low dielectric constant, no plasma-induced surface damage and no surface oxidization problem. Ourapproach will help to increase the power levels, and solve reliability and stability problems for GaN-based transistors, which is a key for the Transmit/Receive (T/R) module.

* information listed above is at the time of submission.

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