Solving Reliability and Stability Problems for AlGaN/GaN Heterostructure Field Effect Transistors using BCB Passivation Technology

Award Information
Agency:
Department of Defense
Amount:
$69,929.00
Program:
SBIR
Contract:
DASG6003P0226
Solitcitation Year:
N/A
Solicitation Number:
N/A
Branch:
Missile Defense Agency
Award Year:
2003
Phase:
Phase I
Agency Tracking Number:
031-1173
Solicitation Topic Code:
N/A
Small Business Information
SENSOR ELECTRONIC TECHNOLOGY, INC.
1195 Atlas Road, Columbia, SC, 29209
Hubzone Owned:
N
Woman Owned:
N
Socially and Economically Disadvantaged:
N
Duns:
135907686
Principal Investigator
 Xuhong Hu
 Research Scientist
 (803) 647-9757
 hu@s-et.com
Business Contact
 Remis Gaska
Title: President and CEO
Phone: (803) 647-9757
Email: gaska@s-et.com
Research Institution
N/A
Abstract
We propose to develop a new technology to AlGaN/GaN Heterostructure Field Effect Transistors (HFET) using benzocyclobutene (BCB) surface passivation process to improve microwave power and power added efficiency for the development of reliable and stablehigh-power AlGaN/GaN HFET microwave amplifiers. We will use this proprietary technology of the GaN-based BCB passivation for the fabrication of a more reliable and stable AlGaN/GaN HFETs. Similar to photoresist process, the BCB pattern can be wellcontrolled in the device fabrication. Comparing with conventional passivation, the BCB passivation technology has advantages of simple manufacturing process, low dielectric constant, no plasma-induced surface damage and no surface oxidization problem. Ourapproach will help to increase the power levels, and solve reliability and stability problems for GaN-based transistors, which is a key for the Transmit/Receive (T/R) module.

* information listed above is at the time of submission.

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