Development of Multi-Wafer Growth Reactor With Migration Enhanced MOCVD Capability for AlInGaN-based Transistor Wafer Production

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: FA8650-04-M-5421
Agency Tracking Number: B041-035-1417
Amount: $99,642.00
Phase: Phase I
Program: SBIR
Awards Year: 2004
Solicitation Year: 2004
Solicitation Topic Code: MDA04-035
Solicitation Number: 2004.1
Small Business Information
1195 Atlas Road, Columbia, SC, 29209
DUNS: 135907686
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Remis Gaska
 President and CEO
 (803) 647-9757
 gaska@s-et.com
Business Contact
 Remis Gaska
Title: President and CEO
Phone: (803) 647-9757
Email: gaska@s-et.com
Research Institution
N/A
Abstract
SET will develop commercially viable large area multi-epitaxial wafer technology for manufacturing of reliable high microwave power transistors and amplifiers for new generation of Transmit/Receive modules.

* Information listed above is at the time of submission. *

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